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均匀超长碳化硅纳米线的微波吸收特性

Microwave Absorption Properties of Uniform Ultra-Long SiC Nanowires.

作者信息

Wei Jian, Zhang Qian, Zhao Lili, Nie Zhengbo, Hao Lei

机构信息

College of Materials and Mineral Resources, Xi'an University of Architecture and Technology, Xi'an 710055, China.

出版信息

J Nanosci Nanotechnol. 2018 Feb 1;18(2):1224-1231. doi: 10.1166/jnn.2018.14184.

Abstract

The uniform ultra-long SiC nanowires (SiCNWs) were incorporated into the epoxy matrix to characterize the morphology effect on their electromagnetic wave absorption performance. The ultra-long SiCNWs with lengths of hundreds of micrometers were fabricated by chemical vapor deposition technique at 1250 °C, and have diameters of 10-60 nm with uniform morphologies. The microwave absorption performance of SiCNW/epoxy resin composites was investigated in the range of 8-18 GHz. Significant absorbing properties were discovered in the composites at frequencies of 8-12.4 GHz, comparing with a control sample. The slightest reflection loss (RL) value of -0.5 dB was obtained at 15 GHz at a very small SiCNWs concentration of 0.05 wt%. The significant absorbing properties of the uniform ultra-long SiCNWs at low frequencies can be mainly attributed to homogeneous small diameters to reduce the electromagnetic wave reflectance, high density interfacial polarization, complex conductive network structure and quantum effect.

摘要

将均匀的超长碳化硅纳米线(SiCNWs)掺入环氧树脂基体中,以表征其形态对电磁波吸收性能的影响。通过化学气相沉积技术在1250℃下制备了长度为数百微米的超长SiCNWs,其直径为10-60nm,形态均匀。在8-18GHz范围内研究了SiCNW/环氧树脂复合材料的微波吸收性能。与对照样品相比,在8-12.4GHz频率下复合材料表现出显著的吸收特性。在极低的SiCNWs浓度0.05wt%下,在15GHz时获得了最小反射损耗(RL)值-0.5dB。均匀超长SiCNWs在低频下的显著吸收特性主要可归因于均匀的小直径以降低电磁波反射率、高密度界面极化、复杂的导电网络结构和量子效应。

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