利用KrF准分子激光退火技术结合新型大气压等离子体增强化学气相沉积技术改善栅堆叠LaAlO₃/ZrO₂铟镓锌氧化物薄膜晶体管性能

Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

作者信息

Wu Chien-Hung, Chang Kow-Ming, Chen Yi-Ming, Huang Bo-Wen, Zhang Yu-Xin, Wang Shui-Jinn

机构信息

Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, 300, R.O.C.

Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.

出版信息

J Nanosci Nanotechnol. 2018 Mar 1;18(3):1917-1921. doi: 10.1166/jnn.2018.14976.

DOI:10.1166/jnn.2018.14976

PMID:29448683

Abstract

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.

摘要

采用大气压等离子体增强化学气相沉积（AP-PECVD）技术和KrF准分子激光退火（ELA）来制备铟镓锌氧化物薄膜晶体管（IGZO-TFT）。具有150 mJ/cm2激光退火密度的器件表现出优异的电学特性，开/关电流比提高到4.7×107，沟道迁移率高达10 cm2/V-s，亚阈值摆幅低至0.15 V/dec。这些改进归因于将IGZO沟道中的氧空位调整到约28.3%的适当范围，并减少了高k/IGZO界面处的陷阱。