微波退火对非晶铟镓锌氧化物薄膜晶体管可靠性特性的影响

The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.

作者信息

Wu Chien-Hung, Chang Kow-Ming, Chen Yi-Ming, Zhang Yu-Xin, Cheng Chia-Yao

机构信息

Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, 30012, R.O.C.

Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 30010, R.O.C.

出版信息

J Nanosci Nanotechnol. 2019 Apr 1;19(4):2189-2192. doi: 10.1166/jnn.2019.15996.

DOI:10.1166/jnn.2019.15996

PMID:30486965

Abstract

Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, flexible, transmission, and uniformity. The thin film transistors (TFTs) with a-IGZO thin film as active layer perform higher field-effect mobility (>10 cm²/V·S), larger I/I ratio (10), smaller subthreshold swing and better stability against electrical stress. LaAlO₃/ZrO₂ is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.

摘要

非晶氧化物半导体（AOSs）因其高迁移率、低温沉积、柔韧性、透光性和均匀性而备受关注。以非晶铟镓锌氧化物（a-IGZO）薄膜为有源层的薄膜晶体管（TFTs）具有更高的场效应迁移率（>10 cm²/V·S）、更大的开/关电流比（10）、更小的亚阈值摆幅以及更好的电应力稳定性。在不降低a-IGZO TFTs性能的前提下，采用LaAlO₃/ZrO₂作为a-IGZO TFTs的栅电极和栅介质层。由于微波退火具有良好的能量转换选择性和快速加热速率，因此在该研究中应用微波退火来提高器件的可靠性。通过调整微波退火参数，研究其对a-IGZO TFTs可靠性特性的影响。