Ling Ying, Yang Zehui, Zhang Quan, Zhang Yunfeng, Cai Weiwei, Cheng Hansong
Sustainable Energy Laboratory, Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan, China.
Chem Commun (Camb). 2018 Mar 8;54(21):2631-2634. doi: 10.1039/c7cc08962g.
Defect-rich tungsten disulfide (WS) nanosheets are synthesized via a self-template method, in which tungsten oxide is partially sulfurized to form WS/WO nanosheets. The defect-rich WS nanosheets only require an overpotential of 145 mV to achieve a current density of 10 mA cm with a Tafel slope of 58.5 mV dec and exhibit excellent stability in 0.5 M HSO electrolyte.
富含缺陷的二硫化钨（WS）纳米片通过自模板法合成，其中氧化钨被部分硫化以形成WS/WO纳米片。富含缺陷的WS纳米片仅需145 mV的过电位即可实现10 mA cm的电流密度，塔菲尔斜率为58.5 mV dec，并且在0.5 M HSO电解质中表现出优异的稳定性。
