Department of Physics and Astronomy, University of Alabama in Huntsville, Huntsville, Alabama 35899, USA.
Nanoscale. 2018 Mar 8;10(10):4825-4832. doi: 10.1039/c7nr09396a.
We study the impact of structural features of Si/Al oxide junctions on metal-oxide plasmonic metafilms formed via placing such junctions in close vicinity of an Au/Si Schottky barrier. The emission intensity and dynamics of colloidal semiconductor quantum dots deposited on such metafilms are investigated, while the surface morphology and structural compositions of the Si/Al oxide junction are controlled. The results show the conditions wherein the Si/Al oxide junction can reshape the impact of plasmonic effects, allowing it to increase the lifetimes of excitons. Under these conditions, the plasmonic metafilms can quarantine excitons against the fluctuating trap environments of the quantum dots, offering super-plasmonic emission enhancement that includes enhancement of the spontaneous emission decay rate combined with the suppression of Auger decay.
我们研究了 Si/Al 氧化物结的结构特征对通过将这种结放置在 Au/Si 肖特基势垒附近而形成的金属-氧化物等离子体金属薄膜的影响。研究了沉积在这种金属薄膜上的胶体半导体量子点的发射强度和动力学，同时控制 Si/Al 氧化物结的表面形态和结构组成。结果表明了 Si/Al 氧化物结可以重塑等离子体效应的条件，从而增加激子的寿命。在这些条件下，等离子体金属薄膜可以将激子隔离在量子点的波动陷阱环境之外，提供超等离子体发射增强，包括自发发射衰减率的增强以及俄歇衰减的抑制。
