Sadeghi Seyed M, Gutha Rithvik R, Hatef Ali, Goul Ryan, Wu Judy Z
Department of Physics and Astronomy, University of Alabama in Huntsville, Huntsville, Alabama 35899, United States.
Department of Computer Science and Mathematics, Nipissing University, North Bay, Ontario P1B 8L7, Canada.
ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11913-11921. doi: 10.1021/acsami.9b20517. Epub 2020 Mar 2.
We demonstrate that a solution-processed heterojunction interface formed via the addition of a thin buffer layer of CdSe/ZnS quantum dots (QDs) to a functional metal oxide plasmonic metastructure (FMOP) can set up a collective interquantum dot energy-transport process, significantly enhancing the emission of infrared PbS quantum dots. The FMOP includes a Schottky junction, formed via deposition of a Si layer on arrays of Au nanoantennas and a Si/Al oxide charge barrier. We show when these two junctions are separated from each other by about 15 nm and the CdSe/ZnS quantum dot buffer layer is placed in touch with the Si/Al oxide junction, the quantum efficiency of an upper layer of PbS quantum dots can increase by about 1 order of magnitude. These results highlight a unique energy circuit formed via collective coupling of the CdSe/ZnS quantum dots with the hybridized states of plasmons and diffraction modes of the arrays (surface lattice resonances) and coupling between such resonances with PbS QDs via lattice-induced photonic modes.
我们证明，通过在功能性金属氧化物等离子体超结构（FMOP）中添加一层薄的CdSe/ZnS量子点（QD）缓冲层而形成的溶液处理异质结界面，可以建立一个量子点间的集体能量传输过程，显著增强红外PbS量子点的发射。FMOP包括一个肖特基结，它是通过在金纳米天线阵列上沉积一层硅层和一个Si/Al氧化物电荷势垒形成的。我们表明，当这两个结彼此相隔约15 nm，且CdSe/ZnS量子点缓冲层与Si/Al氧化物结接触时，PbS量子点上层的量子效率可提高约1个数量级。这些结果突出了一种独特的能量电路，它是通过CdSe/ZnS量子点与等离子体的杂化态和阵列的衍射模式（表面晶格共振）的集体耦合以及通过晶格诱导光子模式使这些共振与PbS量子点之间的耦合而形成的。
