Department of Chemistry , University of Utah , 315 South 1400 East , Salt Lake City , Utah 84112 , United States.
J Am Chem Soc. 2018 Mar 21;140(11):4047-4053. doi: 10.1021/jacs.7b13457. Epub 2018 Mar 9.
Electrochemical measurements of the nucleation rate of individual H bubbles at the surface of Pt nanoelectrodes (radius = 7-41 nm) are used to determine the critical size and geometry of H nuclei leading to stable bubbles. Precise knowledge of the H concentration at the electrode surface, C, is obtained by controlled current reduction of H in a HSO solution. Induction times of single-bubble nucleation events are measured by stepping the current, to control C, while monitoring the voltage. We find that gas nucleation follows a first-order rate process; a bubble spontaneously nucleates after a stochastic time delay, as indicated by a sudden voltage spike that results from impeded transport of H to the electrode. Hundreds of individual induction times, at different applied currents and using different Pt nanoelectrodes, are used to characterize the kinetics of phase nucleation. The rate of bubble nucleation increases by four orders of magnitude (0.3-2000 s) over a very small relative change in C (0.21-0.26 M, corresponding to a ∼0.025 V increase in driving force). Classical nucleation theory yields thermodynamic radii of curvature for critical nuclei of 4.4 to 5.3 nm, corresponding to internal pressures of 330 to 270 atm, and activation energies for nuclei formation of 14 to 26 kT, respectively. The dependence of nucleation rate on H concentration indicates that nucleation occurs by a heterogeneous mechanism, where the nuclei have a contact angle of ∼150° with the electrode surface and contain between 35 and 55 H molecules.
电化学测量方法用于测量 Pt 纳米电极(半径=7-41nm)表面单个 H 气泡成核率,以确定导致稳定气泡的 H 核的临界尺寸和几何形状。通过在 HSO 溶液中控制电流还原 H,可以精确获得电极表面的 H 浓度 C。通过逐步改变电流来控制 C,同时监测电压,测量单个气泡成核事件的诱导时间。我们发现气体成核遵循一级速率过程;当 H 向电极的传输受阻时,会突然出现电压尖峰,表明气泡会在随机时间延迟后自发成核。使用不同的 Pt 纳米电极,在不同的施加电流下,测量了数百个单个诱导时间,以表征相成核的动力学。在 C 非常小的相对变化(0.21-0.26M,对应于驱动力增加约 0.025V)下,气泡成核的速率增加了四个数量级(0.3-2000s)。经典成核理论得出临界核的曲率半径为 4.4 到 5.3nm,相应的内部压力为 330 到 270atm,核形成的活化能分别为 14 到 26kT。成核速率对 H 浓度的依赖性表明成核是通过异质机制发生的,其中核与电极表面的接触角约为 150°,并且包含 35 到 55 个 H 分子。