Park Jin-Kown, Takagi Shinichi, Takenaka Mitsuru
Opt Express. 2018 Feb 19;26(4):4842-4852. doi: 10.1364/OE.26.004842.
We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.
我们展示了在绝缘体上III-V族（III-V-OI）晶圆上实现载流子注入式InGaAsP马赫-曾德尔干涉仪（MZI）光调制器与InGaAs金属氧化物半导体场效应晶体管（MOSFET）的单片集成。通过锌扩散和镍-InGaAsP合金沿着InGaAsP肋形波导形成了低电阻率横向PIN结，从而实现了InGaAs MOSFET对InGaAsP光调制器的直接驱动。通过从栅极电压约为1 V的InGaAs MOSFET注入漏极电流，获得了InGaAsP光调制器的π相移。InGaAsP光调制器与InGaAs驱动MOSFET单片集成的这一概念验证演示将使我们能够在III-V族互补金属氧化物半导体光子学平台上开发高性能、低功耗的电子-光子集成电路。
