2D GeP：一种具有强面内各向异性的未被充分开发的低对称半导体。
2D GeP: An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy.
机构信息
State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P. R. China.
出版信息
Adv Mater. 2018 Apr;30(14):e1706771. doi: 10.1002/adma.201706771. Epub 2018 Feb 26.
Germanium phosphide (GeP), a new member of the Group IV-Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51 eV for bulk, with highly anisotropic dispersions of band structures. Thin GeP shows strong anisotropy of phonon vibrations. Moreover, photodetectors based on GeP flakes show highly anisotropic behavior with anisotropic factors of 1.52 and 1.83 for conductance and photoresponsivity, respectively. This work lays the foundation and ignites future research interests in Group IV-Group V compound 2D materials.
磷化锗（GeP）是 IV 族-VI 族化合物的新成员，具有实验和理论证明的强各向异性物理性质，被引入快速发展的二维家族。磷化锗的间接带隙可以从单层的 1.68eV 急剧调谐到体相的 0.51eV，同时具有高度各向异性的能带结构色散。薄的磷化锗表现出强烈的声子振动各向异性。此外，基于磷化锗薄片的光电探测器表现出高度各向异性的行为，电导和光响应率的各向异性因子分别为 1.52 和 1.83。这项工作为 IV 族-VI 族化合物二维材料的未来研究奠定了基础并激发了人们的研究兴趣。
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