Hu Xuan, Yasaei Poya, Jokisaari Jacob, Öğüt Serdar, Salehi-Khojin Amin, Klie Robert F
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA.
Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA.
Phys Rev Lett. 2018 Feb 2;120(5):055902. doi: 10.1103/PhysRevLett.120.055902.
Two-dimensional materials, including graphene, transition metal dichalcogenides and their heterostructures, exhibit great potential for a variety of applications, such as transistors, spintronics, and photovoltaics. While the miniaturization offers remarkable improvements in electrical performance, heat dissipation and thermal mismatch can be a problem in designing electronic devices based on two-dimensional materials. Quantifying the thermal expansion coefficient of 2D materials requires temperature measurements at nanometer scale. Here, we introduce a novel nanometer-scale thermometry approach to measure temperature and quantify the thermal expansion coefficients in 2D materials based on scanning transmission electron microscopy combined with electron energy-loss spectroscopy to determine the energy shift of the plasmon resonance peak of 2D materials as a function of sample temperature. By combining these measurements with first-principles modeling, the thermal expansion coefficients (TECs) of single-layer and freestanding graphene and bulk, as well as monolayer MoS_{2}, MoSe_{2}, WS_{2}, or WSe_{2}, are directly determined and mapped.
二维材料,包括石墨烯、过渡金属二卤化物及其异质结构,在诸如晶体管、自旋电子学和光伏等各种应用中展现出巨大潜力。虽然小型化在电气性能方面有显著提升,但在设计基于二维材料的电子器件时,散热和热失配可能会成为问题。量化二维材料的热膨胀系数需要在纳米尺度上进行温度测量。在此,我们引入一种新颖的纳米尺度测温方法,基于扫描透射电子显微镜结合电子能量损失谱,通过确定二维材料等离激元共振峰的能量位移作为样品温度的函数,来测量二维材料中的温度并量化其热膨胀系数。通过将这些测量结果与第一性原理建模相结合,直接确定并绘制了单层及独立石墨烯、体相以及单层二硫化钼、二硒化钼、二硫化钨或二硒化钨的热膨胀系数(TECs)。