单层和少层MoS₂、MoSe₂、WS₂和WSe₂的厚度依赖性微分反射光谱
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS₂, MoSe₂, WS₂ and WSe₂.
作者信息
Niu Yue, Gonzalez-Abad Sergio, Frisenda Riccardo, Marauhn Philipp, Drüppel Matthias, Gant Patricia, Schmidt Robert, Taghavi Najme S, Barcons David, Molina-Mendoza Aday J, de Vasconcellos Steffen Michaelis, Bratschitsch Rudolf, Perez De Lara David, Rohlfing Michael, Castellanos-Gomez Andres
机构信息
National Center for International Research on Green Optoelectronics & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain.
出版信息
Nanomaterials (Basel). 2018 Sep 14;8(9):725. doi: 10.3390/nano8090725.
The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS₂, MoSe₂, WS₂, and WSe₂, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS₂, MoSe₂, WS₂, and WSe₂.
二维（2D）材料的研究领域强烈依赖于光学显微镜表征工具来识别原子级薄的材料并确定其层数。此外，基于光学显微镜的技术为研究这些纳米材料的光学特性打开了大门。我们对二维半导体过渡金属二硫属化物（TMDCs）MoS₂、MoSe₂、WS₂和WSe₂的差分反射光谱进行了全面研究，其厚度范围从一层到六层。我们分析了不同激子特征的厚度依赖能量，表明不同TMDC材料的能带结构随层数的变化。我们的工作提供了一种利用差分反射光谱法来确定MoS₂、MoSe₂、WS₂和WSe₂层数的途径。
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