State Key Lab of Crystal Materials, Shandong University , Jinan 250100 , P.R. China.
School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.
ACS Appl Mater Interfaces. 2018 Mar 14;10(10):8393-8398. doi: 10.1021/acsami.8b00425. Epub 2018 Mar 5.
High-quality CHNHPbICl films have attracted research interests in photoelectric devices because of their improved carrier diffusion length and charge mobility. Herein, a solvent-assisted thermal-pressure strategy is developed to promote the secondary growth of perovskite grains in the films. Highly oriented perovskite films are then obtained with large-sized grains (5-10 μm). As a consequence, the photodetectors based on the high-quality CHNHPbICl films exhibit enhanced ophtoelectrical performance, including high on/off ratio (>2.1 × 10), fast response time (54/63 μs), and high detectivity (∼1.3 × 10). This work suggests an effective approach for high-quality perovskite films, which will be promising candidates for other high-efficiency photoelectric devices.
高质量的 CHNHPbICl 薄膜因其改善的载流子扩散长度和电荷迁移率而引起了光电设备领域的研究兴趣。在此,我们开发了一种溶剂辅助热压策略来促进薄膜中钙钛矿晶粒的二次生长。然后,获得了具有大尺寸晶粒(5-10μm)的高度取向钙钛矿薄膜。结果,基于高质量 CHNHPbICl 薄膜的光电探测器表现出增强的光电性能,包括高的开/关比(>2.1×10)、快速的响应时间(54/63μs)和高的探测率(∼1.3×10)。这项工作为高质量钙钛矿薄膜提供了一种有效的方法,有望成为其他高效光电设备的候选材料。