• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

采用混合键合堆叠的第二代小像素技术

Second Generation Small Pixel Technology Using Hybrid Bond Stacking.

作者信息

Venezia Vincent C, Hsiung Alan Chih-Wei, Yang Wu-Zang, Zhang Yuying, Zhao Cheng, Lin Zhiqiang, Grant Lindsay A

机构信息

OmniVision Technologies, Inc., Santa Clara, CA 95054, USA.

出版信息

Sensors (Basel). 2018 Feb 24;18(2):667. doi: 10.3390/s18020667.

DOI:10.3390/s18020667
PMID:29495272
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5855510/
Abstract

In this work, OmniVision's second generation (Gen2) of small-pixel BSI stacking technologies is reviewed. The key features of this technology are hybrid-bond stacking, deeper back-side, deep-trench isolation, new back-side composite metal-oxide grid, and improved gate oxide quality. This Gen2 technology achieves state-of-the-art low-light image-sensor performance for 1.1, 1.0, and 0.9 µm pixel products. Additional improvements on this technology include less than 100 ppm white-pixel process and a high near-infrared (NIR) QE technology.

摘要

在这项工作中,对豪威科技的第二代(Gen2)小像素背照式堆叠技术进行了综述。该技术的关键特性包括混合键合堆叠、更深的背面、深沟槽隔离、新型背面复合金属氧化物栅格以及改进的栅极氧化物质量。这种Gen2技术在1.1微米、1.0微米和0.9微米像素产品上实现了领先的低光图像传感器性能。该技术的其他改进包括低于100 ppm的白像素工艺和高近红外(NIR)量子效率技术。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/c180ad9e933b/sensors-18-00667-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/4ef2b8b6c563/sensors-18-00667-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/d6bdb87f672e/sensors-18-00667-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/55785b9103a8/sensors-18-00667-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/cc5c3cc3f598/sensors-18-00667-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/872571a586d4/sensors-18-00667-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/ca04b0135f70/sensors-18-00667-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/bdc9608b1958/sensors-18-00667-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/5d7c5f5e5977/sensors-18-00667-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/46fc44e3c955/sensors-18-00667-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/25a2e98deddc/sensors-18-00667-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/c180ad9e933b/sensors-18-00667-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/4ef2b8b6c563/sensors-18-00667-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/d6bdb87f672e/sensors-18-00667-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/55785b9103a8/sensors-18-00667-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/cc5c3cc3f598/sensors-18-00667-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/872571a586d4/sensors-18-00667-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/ca04b0135f70/sensors-18-00667-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/bdc9608b1958/sensors-18-00667-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/5d7c5f5e5977/sensors-18-00667-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/46fc44e3c955/sensors-18-00667-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/25a2e98deddc/sensors-18-00667-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0576/5855510/c180ad9e933b/sensors-18-00667-g011.jpg

相似文献

1
Second Generation Small Pixel Technology Using Hybrid Bond Stacking.采用混合键合堆叠的第二代小像素技术
Sensors (Basel). 2018 Feb 24;18(2):667. doi: 10.3390/s18020667.
2
Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications.用于CMOS图像传感器应用的全耗尽型沟槽钉扎光电门
Sensors (Basel). 2020 Jan 28;20(3):727. doi: 10.3390/s20030727.
3
A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications.一种采用四抽头锁定像素的飞行时间距离传感器,具有高近红外灵敏度,适用于激光雷达应用。
Sensors (Basel). 2019 Dec 23;20(1):116. doi: 10.3390/s20010116.
4
A High-Performance 2.5 μm Charge Domain Global Shutter Pixel and Near Infrared Enhancement with Light Pipe Technology.采用光管技术的高性能 2.5μm 电荷域全局快门像素和近红外增强。
Sensors (Basel). 2020 Jan 6;20(1):307. doi: 10.3390/s20010307.
5
Toward one Giga frames per second--evolution of in situ storage image sensors.朝着每秒十亿帧迈进——原位存储图像传感器的演进。
Sensors (Basel). 2013 Apr 8;13(4):4640-58. doi: 10.3390/s130404640.
6
Near-IR absorption enhancement and crosstalk reduction of a photodiode in a CMOS indirect time-of-flight sensor.CMOS间接飞行时间传感器中光电二极管的近红外吸收增强与串扰降低
Appl Opt. 2022 Aug 1;61(22):6577-6583. doi: 10.1364/AO.464089.
7
A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection.采用互补载流子收集技术的3.2μm HDR像素中的750K光电荷线性满阱。
Sensors (Basel). 2018 Jan 20;18(1):305. doi: 10.3390/s18010305.
8
High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation.高灵敏度像素,采用四通道 WRGB 彩色滤光片和空间深槽隔离技术。
Sensors (Basel). 2019 Oct 26;19(21):4653. doi: 10.3390/s19214653.
9
A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.一种用于亚微米像素的45纳米堆叠式互补金属氧化物半导体图像传感器工艺技术。
Sensors (Basel). 2017 Dec 5;17(12):2816. doi: 10.3390/s17122816.
10
Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.采用反向衬底偏置的 pinned 光电二极管 CMOS 图像传感器的设计与性能
Sensors (Basel). 2018 Jan 3;18(1):118. doi: 10.3390/s18010118.

引用本文的文献

1
Image Quality Assessment for Realistic Zoom Photos.逼真变焦照片的图像质量评估。
Sensors (Basel). 2023 May 13;23(10):4724. doi: 10.3390/s23104724.
2
Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations.深槽隔离和倒金字塔阵列结构用于通过模拟提高 CMOS 图像传感器中光电二极管的光学效率。
Sensors (Basel). 2020 May 28;20(11):3062. doi: 10.3390/s20113062.
3
Proximity Gettering Design of Hydrocarbon⁻Molecular⁻Ion⁻Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors.

本文引用的文献

1
A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.一种用于亚微米像素的45纳米堆叠式互补金属氧化物半导体图像传感器工艺技术。
Sensors (Basel). 2017 Dec 5;17(12):2816. doi: 10.3390/s17122816.
用于CMOS图像传感器的基于暗电流光谱的碳氢化合物分子离子注入硅片的近邻吸除设计
Sensors (Basel). 2019 May 4;19(9):2073. doi: 10.3390/s19092073.
4
Front-Inner Lens for High Sensitivity of CMOS Image Sensors.前内透镜用于提高 CMOS 图像传感器的灵敏度。
Sensors (Basel). 2019 Mar 29;19(7):1536. doi: 10.3390/s19071536.