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一种用于亚微米像素的45纳米堆叠式互补金属氧化物半导体图像传感器工艺技术。

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.

作者信息

Takahashi Seiji, Huang Yi-Min, Sze Jhy-Jyi, Wu Tung-Ting, Guo Fu-Sheng, Hsu Wei-Cheng, Tseng Tung-Hsiung, Liao King, Kuo Chin-Chia, Chen Tzu-Hsiang, Chiang Wei-Chieh, Chuang Chun-Hao, Chou Keng-Yu, Chung Chi-Hsien, Chou Kuo-Yu, Tseng Chien-Hsien, Wang Chuan-Joung, Yaung Dun-Nien

机构信息

Taiwan Semiconductor Manufacturing Company, No. 8, Li-Hsin Rd. 6, Hsinchu Science Park, Hsinchu 300, Taiwan.

出版信息

Sensors (Basel). 2017 Dec 5;17(12):2816. doi: 10.3390/s17122816.

DOI:10.3390/s17122816
PMID:29206162
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5751557/
Abstract

A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e/s at 60 °C, an ultra-low read noise of 0.90 e·rms, a high full well capacity (FWC) of 4100 e, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.

摘要

通过实验和模拟研究了亚微米像素的明暗性能。结合堆叠式互补金属氧化物半导体图像传感器（CIS）的先进节点技术很有前景，因为它可能会提高性能。在这项工作中，我们展示了在60°C时3.2 e/s的低暗电流、0.90 e·rms的超低读取噪声、4100 e的高满阱容量（FWC）以及在像素电源电压为2.8 V时0.9μm像素中0.5%的光晕现象。此外，还讨论了0.8μm像素的模拟研究结果。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/c14e2b2919e4/sensors-17-02816-g017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/ed020cb0b0bb/sensors-17-02816-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/df7c06228216/sensors-17-02816-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/0046131b189c/sensors-17-02816-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/33fc96d1a0d5/sensors-17-02816-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/f7a8c46c3827/sensors-17-02816-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/893c9c75e0c8/sensors-17-02816-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/e8357062863d/sensors-17-02816-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/ba8050814b27/sensors-17-02816-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/27f1cd3ae278/sensors-17-02816-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/c0e9db584145/sensors-17-02816-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/c3d564da4a61/sensors-17-02816-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/44a80e9b1767/sensors-17-02816-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/0b065049909e/sensors-17-02816-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/ea4e25601a9c/sensors-17-02816-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/7036ea6827c4/sensors-17-02816-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/7e754645316b/sensors-17-02816-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/c14e2b2919e4/sensors-17-02816-g017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/ed020cb0b0bb/sensors-17-02816-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/df7c06228216/sensors-17-02816-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/0046131b189c/sensors-17-02816-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/33fc96d1a0d5/sensors-17-02816-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/f7a8c46c3827/sensors-17-02816-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/893c9c75e0c8/sensors-17-02816-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/e8357062863d/sensors-17-02816-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/ba8050814b27/sensors-17-02816-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/27f1cd3ae278/sensors-17-02816-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/c0e9db584145/sensors-17-02816-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/c3d564da4a61/sensors-17-02816-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/44a80e9b1767/sensors-17-02816-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/0b065049909e/sensors-17-02816-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/ea4e25601a9c/sensors-17-02816-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/7036ea6827c4/sensors-17-02816-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/7e754645316b/sensors-17-02816-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b704/5751557/c14e2b2919e4/sensors-17-02816-g017.jpg

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Sci Rep. 2022 Aug 16;12(1):13869. doi: 10.1038/s41598-022-17952-z.
4
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Nanomaterials (Basel). 2021 Nov 12;11(11):3036. doi: 10.3390/nano11113036.
5
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Micromachines (Basel). 2021 May 6;12(5):527. doi: 10.3390/mi12050527.
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