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常压下化学气相沉积法制备二氧化钒结构的进展、挑战与展望

Advancements, Challenges and Prospects of Chemical Vapour Pressure at Atmospheric Pressure on Vanadium Dioxide Structures.

作者信息

Drosos Charalampos, Vernardou Dimitra

机构信息

Delta Nano-Engineering Solutions Ltd., Paddock Wood, Kent TN12 6EL, UK.

Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece.

出版信息

Materials (Basel). 2018 Mar 5;11(3):384. doi: 10.3390/ma11030384.

DOI:10.3390/ma11030384
PMID:29510593
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5872963/
Abstract

Vanadium (IV) oxide (VO₂) layers have received extensive interest for applications in smart windows to batteries and gas sensors due to the multi-phases of the oxide. Among the methods utilized for their growth, chemical vapour deposition is a technology that is proven to be industrially competitive because of its simplicity when performed at atmospheric pressure (APCVD). APCVD's success has shown that it is possible to create tough and stable materials in which their stoichiometry may be precisely controlled. Initially, we give a brief overview of the basic processes taking place during this procedure. Then, we present recent progress on experimental procedures for isolating different polymorphs of VO₂. We outline emerging techniques and processes that yield in optimum characteristics for potentially useful layers. Finally, we discuss the possibility to grow 2D VO₂ by APCVD.

摘要

由于二氧化钒(VO₂)层的多相性,其在从智能窗户到电池以及气体传感器等应用领域受到了广泛关注。在用于其生长的方法中,化学气相沉积是一种经证明在工业上具有竞争力的技术,因为在大气压下进行时(常压化学气相沉积,APCVD)它很简单。常压化学气相沉积的成功表明,有可能制造出坚固且稳定的材料,其化学计量比可以精确控制。首先,我们简要概述在此过程中发生的基本过程。然后,我们介绍在分离VO₂不同多晶型物的实验程序方面的最新进展。我们概述了能产生具有潜在有用层最佳特性的新兴技术和工艺。最后,我们讨论通过常压化学气相沉积生长二维VO₂的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/9fd381ba6dde/materials-11-00384-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/cb7146f673e7/materials-11-00384-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/018d3ee99a64/materials-11-00384-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/c64e4362839b/materials-11-00384-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/7c450d3c83d9/materials-11-00384-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/802c6349efa7/materials-11-00384-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/07f5e4b74b3e/materials-11-00384-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/9fd381ba6dde/materials-11-00384-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/cb7146f673e7/materials-11-00384-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/018d3ee99a64/materials-11-00384-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/c64e4362839b/materials-11-00384-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/7c450d3c83d9/materials-11-00384-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/802c6349efa7/materials-11-00384-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/07f5e4b74b3e/materials-11-00384-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9318/5872963/9fd381ba6dde/materials-11-00384-g007.jpg

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