通过对Ti₃SiC₂（MAX相）进行选择性蚀刻以获得二维碳化钛（MXene）。
Selective Etching of Silicon from Ti SiC (MAX) To Obtain 2D Titanium Carbide (MXene).
作者信息
Alhabeb Mohamed, Maleski Kathleen, Mathis Tyler S, Sarycheva Asia, Hatter Christine B, Uzun Simge, Levitt Ariana, Gogotsi Yury
机构信息
A.J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia, PA, 19104, USA.
出版信息
Angew Chem Int Ed Engl. 2018 May 4;57(19):5444-5448. doi: 10.1002/anie.201802232. Epub 2018 Mar 26.
Until now, MXenes could only be produced from MAX phases containing aluminum, such as Ti AlC . Here, we report on the synthesis of Ti C (MXene) through selective etching of silicon from titanium silicon carbide-the most common MAX phase. Liters of colloidal solutions of delaminated Ti SiC -derived MXene (0.5-1.3 mg mL ) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti AlC . This new synthesis method greatly widens the range of precursors for MXene synthesis.
到目前为止，MXenes只能由含铝的MAX相制备，比如TiAlC。在此，我们报道了通过从最常见的MAX相碳化钛硅中选择性蚀刻硅来合成Ti₃C₂（MXene）。制备出了数升分层的源自Ti₃SiC₂的MXene胶体溶液（0.5 - 1.3毫克/毫升），并将其加工成柔性导电薄膜，该薄膜比由TiAlC合成的MXene具有更高的抗氧化性。这种新的合成方法极大地拓宽了MXene合成的前驱体范围。
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