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二维极限下的传统半导体。

Traditional Semiconductors in the Two-Dimensional Limit.

作者信息

Lucking Michael C, Xie Weiyu, Choe Duk-Hyun, West Damien, Lu Toh-Ming, Zhang S B

机构信息

Department of Physics, Applied Physics & Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.

出版信息

Phys Rev Lett. 2018 Feb 23;120(8):086101. doi: 10.1103/PhysRevLett.120.086101.

Abstract

Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

摘要

近年来,对二维材料的兴趣呈爆发式增长。人们不仅因其新颖的电子特性(如石墨烯中出现的狄拉克费米子)对其进行研究,还将其视为一种新的范式,即堆叠不同的二维材料层可能会实现不同的功能或器件。在此,通过第一性原理理论,我们揭示了一大类源自传统III-V族、II-VI族和I-VII族半导体的二维材料。研究发现,在超薄极限情况下,所研究的绝大多数传统二元半导体(一系列28种半导体)不仅在二维双层蜂窝结构中动力学稳定,而且比与三维体相相关的截顶纤锌矿或闪锌矿结构在能量上更稳定。这些发现不仅极大地拓展了二维材料的范畴,还表明在双层蜂窝结构形式下,即使是普通半导体,如砷化镓,也能展现出奇异的拓扑性质。

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