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预测层状半导体中的弱拓扑绝缘体。

Prediction of weak topological insulators in layered semiconductors.

机构信息

Institute for Inorganic and Analytical Chemistry, Johannes Gutenberg University of Mainz, 55099 Mainz, Germany.

出版信息

Phys Rev Lett. 2012 Sep 14;109(11):116406. doi: 10.1103/PhysRevLett.109.116406. Epub 2012 Sep 13.

Abstract

We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.

摘要

我们通过从头算方法在蜂窝晶格中发现了弱拓扑绝缘体。我们提出了一个在原胞中具有奇数层的结构作为形成弱拓扑绝缘体的先决条件。在这里,单层 KHgSb 是最合适的候选材料,因为它具有 0.24eV 的大体能隙。其侧面具有金属表面态,形成两个各向异性的狄拉克锥。虽然偶数层结构的堆叠导致平凡的绝缘体,但如果晶体中存在一个额外的单层作为堆叠缺陷,这些结构可以容纳具有大体能隙的量子自旋霍尔层。所报道的蜂窝状化合物可以作为原型,帮助在层状小带隙半导体中发现新的弱拓扑绝缘体。

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