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第一性原理研究 AlSb 单层的电子和光学性质。

First-principles study on the electronic and optical properties of AlSb monolayer.

机构信息

Computational Nanophysics Laboratory (CNL), Department of physics, University of Guilan, P. O. Box 41335-1914, Rasht, Iran.

出版信息

Sci Rep. 2023 Jun 19;13(1):9925. doi: 10.1038/s41598-023-37081-5.

Abstract

Using density functional theory and many-body perturbation theory, we systematically investigate the optoelectronic properties of AlSb monolayer, which has been recently synthesized by molecular beam epitaxy [ACS Nano 2021, 15, 5, 8184-8191]. After confirming the dynamical stability of the monolayer, we analyze its electronic properties at different levels of theory without (PBE, HSE03, HSE06) and with (G[Formula: see text]W[Formula: see text], GW[Formula: see text], and GW) electron-electron interaction. The results show that AlSb monolayer is a semiconductor with a direct quasiparticle band gap of 1.35 eV while its electronic structure is dominated by spin-orbit coupling. Also, we study the optical properties of the monolayer by solving the Bethe-Salpeter equation. In this regard, the effects of spin-orbit coupling, electron-electron correlation, and electron-hole interaction on the optical spectrum of the monolayer are evaluated. Based on the highest level of theory, the first bright exciton is found to be located at 0.97 eV, in excellent agreement with the experimental value (0.93 eV). Moreover, the exciton binding energy, effective mass, and Bohr radius are obtained 0.38 eV, 0.25 m[Formula: see text], and 6.31 Å, respectively. This work provides a better understanding of the electronic, optical, and excitonic properties of AlSb monolayer and may shed light on its potential applications.

摘要

我们使用密度泛函理论和多体微扰理论,系统地研究了最近通过分子束外延合成的 AlSb 单层的光电性质[ACS Nano 2021, 15, 5, 8184-8191]。在确认单层的动力学稳定性后,我们在不同理论水平(无电子-电子相互作用的 PBE、HSE03、HSE06 和有电子-电子相互作用的 G[Formula: see text]W[Formula: see text]、GW[Formula: see text]和 GW)下分析了其电子性质。结果表明,AlSb 单层是一种具有 1.35 eV 直接准粒子带隙的半导体,其电子结构主要由自旋轨道耦合主导。此外,我们通过求解 Bethe-Salpeter 方程研究了单层的光学性质。在这方面,评估了自旋轨道耦合、电子-电子相关和电子-空穴相互作用对单层光学谱的影响。基于最高理论水平,发现第一亮激子位于 0.97 eV,与实验值(0.93 eV)非常吻合。此外,激子结合能、有效质量和玻尔半径分别为 0.38 eV、0.25 m[Formula: see text]和 6.31 Å。这项工作提供了对 AlSb 单层的电子、光学和激子性质的更好理解,并可能为其潜在应用提供启示。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/87f2/10279747/480dd9d950dd/41598_2023_37081_Fig1_HTML.jpg

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