富缺陷、无硼氮键且双掺杂的石墨烯用于高效氧还原反应。

Defect-rich, boron-nitrogen bonds-free and dual-doped graphenes for highly efficient oxygen reduction reaction.

机构信息

School of Chemical and Environmental Engineering, Anyang Institute of Technology, Anyang 455000, China; Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Materials Science and Engineering, Beihang University, 100191 Beijing, China.

Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Materials Science and Engineering, Beihang University, 100191 Beijing, China.

出版信息

J Colloid Interface Sci. 2018 Jul 1;521:11-16. doi: 10.1016/j.jcis.2018.03.022. Epub 2018 Mar 8.

DOI:10.1016/j.jcis.2018.03.022

PMID:29547784

Abstract

Defect-rich, boron (B) and nitrogen (N) dual-doped and inert BN covalent bonds-free graphenes (BNGs) can be successfully synthesized via a method of two-step doping combined with chemical etching. B and N doping degree and surface areas of BNGs can be enhanced facilely by chemical etching without forming inert covalent BN bonds. The as-obtained porous BNGs deliver more superior electro-catalytic activity for oxygen reduction reaction than the unetched BNGs and commercial Pt/C catalysts.

摘要

富缺陷、硼（B）和氮（N）双掺杂且无惰性 BN 共价键的石墨烯（BNGs）可以通过两步掺杂结合化学刻蚀的方法成功合成。通过化学刻蚀，在不形成惰性 BN 共价键的情况下，可轻易提高 BNGs 的 B 和 N 掺杂程度和比表面积。所获得的多孔 BNGs 对氧还原反应的电催化活性优于未经刻蚀的 BNGs 和商业 Pt/C 催化剂。