Department of Physics, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom.
Department of Chemical Physics, Weizmann Institute of Science, Rehovot 76100, Israel.
J Chem Phys. 2018 Mar 21;148(11):114101. doi: 10.1063/1.4999753.
We present an ab initio theory and computational method for Penning ionization widths. Our method is based on the Fano theory of resonances, algebraic diagrammatic construction (ADC) scheme for many-electron systems, and Stieltjes imaging procedure. It includes an extension of the Fano-ADC scheme [V. Averbukh and L. S. Cederbaum, J. Chem. Phys. 123, 204107 (2005)] to triplet excited states. Penning ionization widths of various He*-H states are calculated as a function of the distance R between He* and H. We analyze the asymptotic (large-R) dependences of the Penning widths in the region where the well-established electron transfer mechanism of the decay is suppressed by the multipole- and/or spin-forbidden energy transfer. The R and R power laws are derived for the asymptotes of the Penning widths of the singlet and triplet excited states of He*(1s2sS), respectively. We show that the electron transfer mechanism dominates Penning ionization of He*(1s2s S)-H up until the He*-H separation is large enough for the radiative decay of He* to become the dominant channel. The same mechanism also dominates the ionization of He*(1s2s S)-H when R < 5 Å. We estimate that the regime of energy transfer in the He*-H Penning ionization cannot be reached by approaching zero collisional temperature. However, the multipole-forbidden energy transfer mechanism can become important for Penning ionization in doped helium droplets.
我们提出了一种从头计算 Penning 电离宽度的理论和计算方法。我们的方法基于共振的 Fano 理论、多电子系统的代数图论构造 (ADC) 方案和 Stieltjes 成像过程。它包括将 Fano-ADC 方案[V. Averbukh 和 L. S. Cederbaum,J. Chem. Phys. 123, 204107 (2005)]扩展到三重态激发态。计算了各种 He*-H 态的 Penning 电离宽度作为 He和 H 之间距离 R 的函数。我们分析了衰减的电子转移机制由于多极和/或自旋禁戒能量转移而被抑制时,Penning 宽度在大 R 区域的渐近(大 R)依赖性。推导出了 He(1s2sS)的单重态和三重态激发态的 Penning 宽度的渐近(大 R)的 R 和 R 幂律。我们表明,电子转移机制在 He*-H 之间的分离足够大以使 He的辐射衰变成为主导通道之前,主导着 He(1s2s S)-H 的 Penning 电离。相同的机制也主导着 He*(1s2s S)-H 的电离,当 R < 5 Å 时。我们估计,通过接近零碰撞温度,无法达到 He*-H Penning 电离中的能量转移范围。然而,多极禁戒能量转移机制对于掺杂氦滴中的 Penning 电离可能变得重要。