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用 Fano 代数图论构造方法计算电子碰撞电离宽度。

Penning ionization widths by Fano-algebraic diagrammatic construction method.

机构信息

Department of Physics, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom.

Department of Chemical Physics, Weizmann Institute of Science, Rehovot 76100, Israel.

出版信息

J Chem Phys. 2018 Mar 21;148(11):114101. doi: 10.1063/1.4999753.

Abstract

We present an ab initio theory and computational method for Penning ionization widths. Our method is based on the Fano theory of resonances, algebraic diagrammatic construction (ADC) scheme for many-electron systems, and Stieltjes imaging procedure. It includes an extension of the Fano-ADC scheme [V. Averbukh and L. S. Cederbaum, J. Chem. Phys. 123, 204107 (2005)] to triplet excited states. Penning ionization widths of various He*-H states are calculated as a function of the distance R between He* and H. We analyze the asymptotic (large-R) dependences of the Penning widths in the region where the well-established electron transfer mechanism of the decay is suppressed by the multipole- and/or spin-forbidden energy transfer. The R and R power laws are derived for the asymptotes of the Penning widths of the singlet and triplet excited states of He*(1s2sS), respectively. We show that the electron transfer mechanism dominates Penning ionization of He*(1s2s S)-H up until the He*-H separation is large enough for the radiative decay of He* to become the dominant channel. The same mechanism also dominates the ionization of He*(1s2s S)-H when R < 5 Å. We estimate that the regime of energy transfer in the He*-H Penning ionization cannot be reached by approaching zero collisional temperature. However, the multipole-forbidden energy transfer mechanism can become important for Penning ionization in doped helium droplets.

摘要

我们提出了一种从头计算 Penning 电离宽度的理论和计算方法。我们的方法基于共振的 Fano 理论、多电子系统的代数图论构造 (ADC) 方案和 Stieltjes 成像过程。它包括将 Fano-ADC 方案[V. Averbukh 和 L. S. Cederbaum,J. Chem. Phys. 123, 204107 (2005)]扩展到三重态激发态。计算了各种 He*-H 态的 Penning 电离宽度作为 He和 H 之间距离 R 的函数。我们分析了衰减的电子转移机制由于多极和/或自旋禁戒能量转移而被抑制时,Penning 宽度在大 R 区域的渐近(大 R)依赖性。推导出了 He(1s2sS)的单重态和三重态激发态的 Penning 宽度的渐近(大 R)的 R 和 R 幂律。我们表明,电子转移机制在 He*-H 之间的分离足够大以使 He的辐射衰变成为主导通道之前,主导着 He(1s2s S)-H 的 Penning 电离。相同的机制也主导着 He*(1s2s S)-H 的电离,当 R < 5 Å 时。我们估计,通过接近零碰撞温度,无法达到 He*-H Penning 电离中的能量转移范围。然而,多极禁戒能量转移机制对于掺杂氦滴中的 Penning 电离可能变得重要。

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