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基于受抑全内反射的相干全光晶体管。

Coherent all-optical transistor based on frustrated total internal reflection.

作者信息

Goodarzi A, Ghanaatshoar M

机构信息

Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin, 1983969411, Tehran, Iran.

出版信息

Sci Rep. 2018 Mar 22;8(1):5069. doi: 10.1038/s41598-018-23367-6.

Abstract

This study aims to design an all-optical transistor based on tunneling of light through frustrated total internal reflection. Under total internal reflection, the electromagnetic wave penetrates into the lower index medium. If a medium with high refractive index is placed close to the boundary of the first one, a portion of light leaks into the second medium. The penetrated electromagnetic field distribution can be influenced by another coherent light in the low refractive index medium via interference, leading to light amplification. Upon this technique, we introduce coherent all-optical transistors based on photonic crystal structures. Subsequently, we inspect the shortest pulse which is amplified by the designed system and also its terahertz repetition rate. We will show that such a system can operate in a cascade form. Operating in terahertz range and the amplification efficiency of around 20 are of advantages of this system.

摘要

本研究旨在设计一种基于光隧穿受阻全内反射的全光晶体管。在全内反射情况下,电磁波会穿透到低折射率介质中。如果将高折射率介质放置在第一种介质边界附近,一部分光会泄漏到第二种介质中。穿透的电磁场分布可通过低折射率介质中的另一束相干光的干涉而受到影响,从而导致光放大。基于此技术,我们引入了基于光子晶体结构的相干全光晶体管。随后,我们检测由设计系统放大的最短脉冲及其太赫兹重复率。我们将证明这样的系统可以级联形式运行。在太赫兹范围内运行以及约20的放大效率是该系统的优势。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c84c/5864731/2325cc27dd90/41598_2018_23367_Fig1_HTML.jpg

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