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高效热电材料BaCuGeP:弥合基于四价主族元素的笼型包合物与无四价主族元素的笼型包合物之间的差距

High-efficiency thermoelectric BaCuGeP: bridging the gap between tetrel-based and tetrel-free clathrates.

作者信息

Wang Jian, Lebedev Oleg I, Lee Kathleen, Dolyniuk Juli-Anna, Klavins Peter, Bux Sabah, Kovnir Kirill

机构信息

Department of Chemistry , Iowa State University , Ames , Iowa 50011 , USA.

Department of Chemistry , University of California , Davis , CA 95616 , USA . Email:

出版信息

Chem Sci. 2017 Dec 1;8(12):8030-8038. doi: 10.1039/c7sc03482b. Epub 2017 Sep 29.

DOI:10.1039/c7sc03482b
PMID:29568451
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5853772/
Abstract

A new type-I clathrate, BaCuGeP, was synthesized by solid-state methods as a polycrystalline powder and grown as a cm-sized single crystal the vertical Bridgman method. Single-crystal and powder X-ray diffraction show that BaCuGeP crystallizes in the cubic space group 3 (no. 223). BaCuGeP is the first representative of anionic clathrates whose framework is composed of three atom types of very different chemical natures: a transition metal, tetrel element, and pnicogen. Uniform distribution of the Cu, Ge, and P atoms over the framework sites and the absence of any superstructural or local ordering in BaCuGeP were confirmed by synchrotron X-ray diffraction, electron diffraction and high-angle annular dark field scanning transmission electron microscopy, and neutron and X-ray pair distribution function analyses. Characterization of the transport properties demonstrate that BaCuGeP is a p-type semiconductor with an intrinsically low thermal conductivity of 0.72 W m K at 812 K. The thermoelectric figure of merit, , for a slice of the Bridgman-grown crystal of BaCuGeP approaches 0.63 at 812 K due to a high power factor of 5.62 μW cm K. The thermoelectric efficiency of BaCuGeP is on par with the best optimized p-type Ge-based clathrates and outperforms the majority of clathrates in the 700-850 K temperature region, including all tetrel-free clathrates. BaCuGeP expands clathrate chemistry by bridging conventional tetrel-based and tetrel-free clathrates. Advanced transport properties, in combination with earth-abundant framework elements and congruent melting make BaCuGeP a strong candidate as a novel and efficient thermoelectric material.

摘要

通过固态方法合成了一种新型的I型包合物BaCuGeP,得到了多晶粉末,并采用垂直布里奇曼法生长出厘米尺寸的单晶。单晶和粉末X射线衍射表明,BaCuGeP结晶于立方空间群Pm3n(编号223)。BaCuGeP是阴离子包合物的首个代表物,其骨架由三种化学性质差异很大的原子类型组成:过渡金属、四价元素和氮族元素。同步辐射X射线衍射、电子衍射、高角度环形暗场扫描透射电子显微镜以及中子和X射线对分布函数分析证实,Cu、Ge和P原子在骨架位点上均匀分布,且BaCuGeP中不存在任何超结构或局部有序。对其输运性质的表征表明,BaCuGeP是一种p型半导体,在812 K时本征热导率低至0.72 W m-1 K-1。由于功率因子高达5.62 μW cm-1 K-2,在812 K时,一片用布里奇曼法生长的BaCuGeP晶体的热电优值zT接近0.63。BaCuGeP的热电效率与最佳优化的p型锗基包合物相当,并且在700 - 850 K温度范围内优于大多数包合物,包括所有无四价元素的包合物。BaCuGeP通过连接传统的含四价元素和无四价元素的包合物,扩展了包合物化学。先进的输运性质,再加上地壳中丰富的骨架元素和一致熔化特性,使BaCuGeP成为一种新型高效热电材料的有力候选者。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0449/5853772/99b7787a19b6/c7sc03482b-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0449/5853772/9417b9f88899/c7sc03482b-f1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0449/5853772/591716cd97a9/c7sc03482b-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0449/5853772/99b7787a19b6/c7sc03482b-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0449/5853772/9417b9f88899/c7sc03482b-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0449/5853772/65c772c43db7/c7sc03482b-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0449/5853772/ec0503cfa8df/c7sc03482b-f3.jpg
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