Ren Miaojuan, Yuan Min, Chen Xinlian, Ji Weixiao, Li Ping, Li Feng
School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China.
Phys Chem Chem Phys. 2018 Apr 4;20(14):9610-9615. doi: 10.1039/c8cp01015c.
Using first-principles calculations, we studied the geometric and band structures of 20 possible configurations of buckled hydrogenated SnPb alloy (SnxPb8-xH8) films. The configurations are topological insulators (TIs) when x ≥ 1. When x increases from 1 to 7, the band gap increases from 0.087 eV to 0.98 eV. The topological characteristics are suggested by s-pxy band inversion and confirmed by helical edge states, which are time-reversal symmetry protected. According to spin-orbit coupling (SOC) analysis results, we draw the conclusion that the Pb atoms have greater SOC strength than the Sn atoms, so when the number ratio of Pb and Sn atoms is greater than 1/12 the SOC strength is large enough to trigger the band inversion between the s and pxy orbitals, causing the SnPb alloy film to turn into a topological insulator (TI) from a normal band insulator (NI). We give a simple rule for the topological criterion of hydrogenated SnPb alloy films by comparing the ratio of Pb and Sn atoms. This would provide a useful reference for the design of topological devices based on NI-TI hetero-junctions for experiments.
通过第一性原理计算,我们研究了20种可能的弯曲氢化锡铅合金(SnxPb8-xH8)薄膜构型的几何结构和能带结构。当x≥1时,这些构型为拓扑绝缘体(TI)。当x从1增加到7时,带隙从0.087电子伏特增加到0.98电子伏特。拓扑特性由s-pxy能带反转表明,并由时间反演对称性保护的螺旋边缘态证实。根据自旋轨道耦合(SOC)分析结果,我们得出结论,Pb原子的SOC强度比Sn原子大,因此当Pb和Sn原子的数量比大于1/12时,SOC强度足以触发s和pxy轨道之间的能带反转,使SnPb合金薄膜从正常带绝缘体(NI)转变为拓扑绝缘体(TI)。通过比较Pb和Sn原子的比例,我们给出了氢化SnPb合金薄膜拓扑判据的简单规则。这将为基于NI-TI异质结的拓扑器件实验设计提供有用的参考。