Faculty of Sciences, Department of Physics , University of Agriculture , Faisalabad 38000 , Pakistan.
ACS Appl Mater Interfaces. 2018 Apr 18;10(15):13150-13157. doi: 10.1021/acsami.8b00058. Epub 2018 Apr 5.
Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p-n diode functionality. In this study, for the first time, we fabricated a heterojunction p-n diode composed of BP and WS. The rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS flakes in our BP/WS van der Waals heterojunction diodes and also verified by density function theory calculations. We report superior functionalities as compared to other van der Waals heterojunction, such as efficient gate-dependent static rectification of 2.6 × 10, temperature dependence, thickness dependence of rectification, and ideality factor of the device. The temperature dependence of Zener breakdown voltage and avalanche breakdown voltage were analyzed in the same device. Additionally, superior optoelectronic characteristics such as photoresponsivity of 500 mA/W and external quantum efficiency of 103% are achieved in the BP/WS van der Waals p-n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS van der Waals p-n diodes have a profound potential to fabricate rectifiers, solar cells, and photovoltaic diodes in 2D semiconductor electronics and optoelectronics.
由单个堆叠制造的包含二维（2D）半导体的异质结构由于其 2D 性质和原子级锐利的界面而表现出有趣的特性。作为一种新兴的 2D 材料，黑磷（BP）纳米片因其具有沿高迁移率的小带隙半导体特性而受到广泛关注。由 p 型 BP 和 n 型过渡金属二卤化物组成的堆叠结构可以产生具有范德华相互作用的原子级锐利界面，从而产生 p-n 二极管功能。在这项研究中，我们首次制造了由 BP 和 WS 组成的异质结 p-n 二极管。我们在 BP/WS 范德华异质结二极管中检查了单层、双层、三层和多层 WS 薄片的整流效果，并通过密度函数理论计算进行了验证。与其他范德华异质结相比，我们报告了优越的功能，例如 2.6×10 的高效栅极依赖静态整流、温度依赖性、整流的厚度依赖性和器件的理想因子。在同一器件中分析了齐纳击穿电压和雪崩击穿电压的温度依赖性。此外，在 BP/WS 范德华 p-n 二极管中实现了卓越的光电特性，例如 500 mA/W 的光响应度和 103%的外量子效率，这在 BP/过渡金属二卤化物异质结构中是前所未有的。BP/WS 范德华 p-n 二极管在 2D 半导体电子学和光电子学中具有制造整流器、太阳能电池和光伏二极管的巨大潜力。
