ACS Nano. 2014 Aug 26;8(8):8292-9. doi: 10.1021/nn5027388.
Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (∼10,000 cm(2)/V·s) and a ∼0.3 eV direct band gap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm(2)/V·s, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependent direct band gap. However, p–n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate-tunable p–n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p–n heterojunction. Upon illumination, these ultrathin p–n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p–n diodes show promise for broad-band photodetection and solar energy harvesting.
黑磷是一种元素二维材料，它是单层黑磷，最近已被机械剥离。在其块状形式中，黑磷表现出高载流子迁移率（约 10000 cm2/V·s）和约 0.3 eV 的直接带隙。在少层黑磷上已经证明了具有高达 1000 cm2/V·s 的迁移率的性能良好的 p 型场效应晶体管以及光电晶体管，由于其高空穴迁移率和厚度相关的直接带隙，因此有望应用于电子学和光电子学。然而，基于黑磷的 p–n 结，即现代电子和光电子器件的基本构建块，尚未实现。在本文中，我们展示了一种基于 p 型黑磷/n 型单层 MoS2 范德华 p–n 异质结的栅控可调 p–n 二极管。在光照下，这些超薄的 p–n 二极管在 633nm 波长处表现出最大的光探测响应度为 418 mA/W，光电能量转换的外量子效率为 0.3%。这些 p–n 二极管有望实现宽带光探测和太阳能收集。
