使用TLD - 400对硼中子俘获疗法（BNCT）束流进行γ射线剂量和中子活化的质量保证测量。

QA measurement of gamma-ray dose and neutron activation using TLD-400 for BNCT beam.

作者信息

Tsai Wen-Chyi, Huang Chun-Kai, Jiang Shiang-Huei

机构信息

Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC.

Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC.

出版信息

Appl Radiat Isot. 2018 Jul;137:73-79. doi: 10.1016/j.apradiso.2018.03.010. Epub 2018 Mar 13.

DOI:10.1016/j.apradiso.2018.03.010

PMID:29587162

Abstract

TLD-400 (CaF:Mn) chips were applied for the gamma-ray dose measurement in a PMMA phantom exposed to a BNCT beam because of their very low neutron sensitivity. Since TLD-400 chips possess an adequate amount of Mn activator they have been employed in this work simultaneously for neuron activation measurement. The self-irradiation TL signals owing to the decay of the neutron induced Mn activity have been applied for a calibration of the TLD-400 chip in situ, where the activities were measured by an HPGe detector system and the energy deposition per disintegration of Mn was calculated by applying a Monte Carlo code. It was accidentally found that the irradiated TLD-400 chips were capable of emitting prominent scintillation lights owing to the induced Mn activity, which can easily be recorded by the TLD reader without heating and after a calibration can be used to determine the Mn activity.

摘要

由于TLD-400（CaF:Mn）芯片的中子灵敏度非常低，因此被用于在暴露于硼中子俘获治疗（BNCT）束的聚甲基丙烯酸甲酯（PMMA）体模中进行伽马射线剂量测量。由于TLD-400芯片含有适量的锰激活剂，因此在这项工作中也同时用于神经元激活测量。由中子诱发的锰活性衰变产生的自辐照热释光（TL）信号被用于原位校准TLD-400芯片，其中活性由高纯锗（HPGe）探测器系统测量，并且通过应用蒙特卡罗代码计算锰每次衰变的能量沉积。偶然发现，受辐照的TLD-400芯片由于诱发的锰活性能够发出显著的闪烁光，这可以很容易地由热释光读出器在不加热的情况下记录下来，并且在校准后可用于确定锰活性。