垂直退火对有机薄膜晶体管二氧化氮响应的影响。

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors.

作者信息

Hou Sihui, Zhuang Xinming, Yang Zuchong, Yu Junsheng

机构信息

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.

出版信息

Nanomaterials (Basel). 2018 Mar 29;8(4):203. doi: 10.3390/nano8040203.

DOI:10.3390/nano8040203

PMID:29596331

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5923533/

Abstract

Nitrogen dioxide (NO₂) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO₂ responsivity of OTFTs to 15 ppm of NO₂ is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO₂, while showing a preferential response to NO₂ compared with SO₂, NH₃, CO, and H₂S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO₂ gas sensing performance.

摘要

基于有机薄膜晶体管（OTFT）的二氧化氮（NO₂）传感器是通过有机半导体（OSC）薄膜的传统退火（水平）和垂直退火工艺制备的。在垂直退火条件下，OTFT对15 ppm NO₂的NO₂响应率为1408%，而采用传统退火时仅为72%。此外，通过垂直退火获得的气体传感器在1 ppm NO₂时已经实现了589%的高传感性能，同时与SO₂、NH₃、CO和H₂S相比，对NO₂表现出优先响应。为了分析OTFT气体传感器性能改善的机制，采用轻敲模式的原子力显微镜（AFM）对6,13-双（三异丙基硅乙炔基）-并五苯（TIPS-并五苯）薄膜的形貌进行了表征。结果表明，在排列良好的TIPS-并五苯薄膜中，导电通道内大量有效的晶界有助于提高NO₂气体传感性能。