Sahoo Satyajeet, Prabaharan S R S
J Nanosci Nanotechnol. 2017 Jan;17(1):72-86. doi: 10.1166/jnn.2017.12805.
Nano-ionic devices based on modest to fast ion conductors as active materials intrigued a revolution in the field of nano solid state resistive memories (the so-called Re-RAM) ever since HP labs unveiled the first solid state memristor device based on titanium dioxide (TiO2). This has brought impetus to the practical implementation of fourth missing element called “Memristor” correlating charge (q) and flux (φ) based on the conceptual thought by Chua in 1971 completing a missing gap between the passive electronic components (R, C and L). It depicts various functional features as memory element in terms of ionic charge transport in solid state by virtue of external electric flux variations. Consequently, a new avenue has been found by manipulating the ionic charge carriers creating a fast switching resistive random access memory (Re-RAM) or the so-called Memristors. The recent research has led to low power, faster switching speed, high endurance and high retention time devices that can be scaled down the order of few nanometers dimension and the 3D stacking is employed that significantly reduces the die area. This review is organized to provide the progress hitherto accomplished in the materials arena to make memristor devices with respect to current research attempts, different stack structures of ReRAM cells using various materials as well as the application of memristive system. Different synthesis approaches to make nano-ionic conducting metal oxides, the fabrication methods for ReRAM cells and its memory performance are reviewed comprehensively.
自从惠普实验室推出首个基于二氧化钛（TiO₂）的固态忆阻器器件以来，以适度至快速离子导体作为活性材料的纳米离子器件引发了纳米固态电阻式存储器（即所谓的阻变存储器，Re-RAM）领域的一场革命。这为基于蔡少棠1971年的概念思想实现第四个缺失元件“忆阻器”带来了动力，该元件将电荷（q）和磁通量（φ）相关联，填补了无源电子元件（电阻R、电容C和电感L）之间的缺失空白。它凭借外部电通量变化，在固态中通过离子电荷传输展现出作为存储元件的各种功能特性。因此，通过操纵离子电荷载流子，人们找到了一条新途径，从而制造出快速开关电阻式随机存取存储器（Re-RAM），即所谓的忆阻器。最近的研究已经制造出了低功耗、更快开关速度、高耐久性和高保持时间的器件，这些器件可以缩小到几纳米尺寸量级，并且采用了3D堆叠技术，显著减小了芯片面积。本综述旨在介绍在材料领域迄今取得的进展，包括当前研究尝试中制造忆阻器器件的情况、使用各种材料的ReRAM单元的不同堆叠结构以及忆阻系统的应用。全面综述了制备纳米离子导电金属氧化物的不同合成方法、ReRAM单元的制造方法及其存储性能。
