Illarionov Georgii A, Morozova Sofia M, Chrishtop Vladimir V, Einarsrud Mari-Ann, Morozov Maxim I
Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, St. Petersburg, Russia.
Department of Material Science and Engineering, NTNU Norwegian University of Science and Technology, Trondheim, Norway.
Front Chem. 2020 Oct 2;8:724. doi: 10.3389/fchem.2020.00724. eCollection 2020.
Titanium dioxide (TiO) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO. Following a brief introduction, we provide an overview of the major areas of application of TiO-based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.
二氧化钛（TiO₂）是电阻式开关应用中使用最广泛的材料之一，这些应用包括随机存取存储器、神经形态计算、生物混合接口和传感器。这些应用大多仍处于早期开发阶段，存在技术挑战且缺乏基本的理解。此外，TiO₂薄膜的功能忆阻特性在很大程度上取决于其加工方法，包括合成、制造和制造后处理。在此，我们概述并总结了与忆阻性TiO₂的合成、技术和应用相关的关键里程碑成就、最新进展和挑战。在简要介绍之后，我们概述了基于TiO₂的忆阻器件的主要应用领域，并讨论了它们的合成、制造、制造后处理以及功能特性。
