Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, and School of Physics and Electronic Engineering , Harbin Normal University , Harbin 150025 , China.
ACS Appl Mater Interfaces. 2018 Apr 25;10(16):14108-14115. doi: 10.1021/acsami.8b00709. Epub 2018 Apr 12.
Here, we report a simple method to grow thin MoS nanosheets (NSs) on the ultralong nitrogen-doped carbon nanotubes through anion-exchange reaction. The MoS NSs are grown on ultralong nitrogen-doped carbon nanotube surfaces, leading to an interesting three-dimensional hierarchical structure. The fabricated hybrid nanotubes have a length of approximately 100 μm, where the MoS nanosheets have a thickness of less than 7.5 nm. The hybrid nanotubes show excellent electromagnetic wave attenuation performance, with the effective absorption bandwidth of 5.4 GHz at the thicknesses of 2.5 mm, superior to the pure MoS nanosheets and the MoS nanosheets grown on the short N-doped carbon nanotube surfaces. The experimental results indicate that the direct growth of MoS on the ultralong nitrogen-doped carbon nanotube surfaces is a key factor for the enhanced electromagnetic wave attenuation property. The results open the avenue for the development of ultralong transition metal dichalcogenides for electromagnetic wave absorbers.
在这里,我们通过阴离子交换反应报告了一种在超长氮掺杂碳纳米管上生长薄的 MoS 纳米片 (NSs) 的简单方法。MoS NSs 生长在超长氮掺杂碳纳米管表面上,导致了有趣的三维分层结构。所制备的混合纳米管的长度约为 100 μm,其中 MoS 纳米片的厚度小于 7.5 nm。混合纳米管表现出优异的电磁波衰减性能,在厚度为 2.5mm 时有效吸收带宽为 5.4GHz,优于纯 MoS 纳米片和生长在短氮掺杂碳纳米管表面上的 MoS 纳米片。实验结果表明,MoS 在超长氮掺杂碳纳米管表面上的直接生长是增强电磁波衰减性能的关键因素。该结果为开发用于电磁波吸收体的超长过渡金属二卤化物开辟了道路。