King Simon G, McCafferty Liam, Tas Mehmet O, Snashall Kaspar, Chen Jeng Shiung, Shkunov Maxim, Stolojan Vlad, Silva S Ravi P
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey GU2 7XH, U.K.
ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11898-11906. doi: 10.1021/acsami.9b19957. Epub 2020 Feb 26.
Research into carbon nanotubes (CNTs) has been a hot topic for almost 3 decades, and it is now that we are beginning to observe the impact of advanced applictions of this nanomaterial in areas such as electronics. Currently, in order to mass produce CNT devices, either large-scale synthesis, followed by numerous energy-intensive processing steps or photolithography processes, including several sputter-deposition steps, are required to pattern this material to fabricate functional devices. In the work reported here, through the utilization of a universal catalyst precursor (cyclopentadienyl iron dicarbonyl dimer) and the optimization of solution parameters, patterned high-quality vertically aligned arrays of single- and few-walled CNTs have been synthesized via various inexpensive, commercially scalable methods such as inkjet printing, stamp printing, spray painting, and even handwriting. The two-step process of precursor printing, followed immediately by CNT growth, results in CNTs with a Raman / ratio of 0.073, demonstrating very high-quality nanotubes. This process eliminates time-consuming and costly CNT post processing techniques or the deposition of numerous substrate barrier and catalyst layers to achieve device manufacturing. As a result, this method has the potential to provide a route for the large-scale synthesis of high-quality single- and few-walled CNTs that can be applied in industrial settings.
对碳纳米管(CNT)的研究近30年来一直是个热门话题,而如今我们才开始看到这种纳米材料在电子等领域的先进应用所产生的影响。目前,为了大规模生产碳纳米管器件,要么进行大规模合成,随后进行大量耗能的加工步骤,要么采用光刻工艺,包括几个溅射沉积步骤,才能对这种材料进行图案化以制造功能器件。在本文报道的工作中,通过使用一种通用的催化剂前体(环戊二烯基二羰基铁二聚体)并优化溶液参数,已经通过各种廉价的、可商业扩展的方法,如喷墨打印、印章印刷、喷涂,甚至手写,合成了图案化的高质量单壁和少壁碳纳米管垂直排列阵列。先进行前体印刷,紧接着进行碳纳米管生长的两步工艺,得到的碳纳米管拉曼I / I比率为0.073,表明是非常高质量的纳米管。该工艺省去了耗时且昂贵的碳纳米管后处理技术,也无需沉积大量的衬底阻挡层和催化剂层来实现器件制造。因此,这种方法有可能为大规模合成可应用于工业环境的高质量单壁和少壁碳纳米管提供一条途径。