Huang Jianhua, Chen Yujin, Lin Yanfu, Gong Xinghong, Luo Zundu, Huang Yidong
Opt Lett. 2018 Apr 15;43(8):1643-1646. doi: 10.1364/OL.43.001643.
An Er:Yb:LuSiO microchip laser was constructed by placing a 1.2 mm thick, Y-cut Er:Yb:LuSiO microchip between two 1.2 mm thick sapphire crystals, in which input and output mirrors were directly deposited onto one face of each crystal. End-pumped by a continuous-wave 975.4 nm diode laser, a 1564 nm multi-longitudinal-mode laser with a maximum output power of 940 mW and slope efficiency of 20% was realized at an absorbed pump power of 5.5 W when the transmission of output mirror was 2.2%. When the transmission of the output mirror was increased to 6%, a 1537 nm single-longitudinal-mode laser with a maximum output power of 440 mW and slope efficiency of 12% was realized at an absorbed pump power of 4.3 W. The results indicate that the Er:Yb:LuSiO crystal is a promising microchip gain medium to realize a single-longitudinal-mode laser.
通过将一块1.2毫米厚、Y切割的铒镱硅酸镥微芯片置于两块1.2毫米厚的蓝宝石晶体之间，构建了一台铒镱硅酸镥微芯片激光器，其中输入镜和输出镜直接沉积在每块晶体的一个面上。由连续波975.4纳米二极管激光器进行端面泵浦，当输出镜透过率为2.2%时，在5.5瓦的吸收泵浦功率下实现了输出功率最高为940毫瓦、斜率效率为20%的1564纳米多纵模激光器。当输出镜透过率增加到6%时，在4.3瓦的吸收泵浦功率下实现了输出功率最高为440毫瓦、斜率效率为12%的1537纳米单纵模激光器。结果表明，铒镱硅酸镥晶体是实现单纵模激光器的一种很有前景的微芯片增益介质。
