Chen Yujin, Huang Jianhua, Lin Yanfu, Gong Xinghong, Luo Zundu, Huang Yidong
Opt Express. 2020 Nov 23;28(24):36986-36993. doi: 10.1364/OE.411590.
A single longitudinal-mode passively Q-switched 1537 nm pulse microchip laser was realized in an Er:Yb:LuSiO crystal. The effects of the pump beam diameter and output mirror transmission on pulse characteristics of the Er:Yb:LuSiO microchip laser were investigated, when a Co:MgAlO saturable absorber with an initial transmission of 95% was used. At an absorbed pump power of 3.4 W, a 1537 nm single-longitudinal-mode pulse laser with energy of 25.8 µJ, repetition frequency of 0.89 kHz, duration of 4.3 ns, and peak output power of 6.0 kW was obtained, when the pump beam diameter and output mirror transmission were 420 µm and 3.0%, respectively. The beam quality factor of output laser with TEM mode was less than 1.3.
在掺铒镱镥硅酸钇（Er:Yb:LuSiO）晶体中实现了单纵模被动调Q的1537 nm脉冲微芯片激光器。当使用初始透过率为95%的钴镁铝酸盐（Co:MgAlO）饱和吸收体时，研究了泵浦光束直径和输出镜透过率对Er:Yb:LuSiO微芯片激光器脉冲特性的影响。在吸收泵浦功率为3.4 W时，当泵浦光束直径和输出镜透过率分别为420 µm和3.0%时，获得了能量为25.8 µJ、重复频率为0.89 kHz、脉宽为4.3 ns、峰值输出功率为6.0 kW的1537 nm单纵模脉冲激光器。TEM模输出激光的光束质量因子小于1.3。
