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通过硬X射线光电子能谱和X射线吸收精细结构探测退火诱导的(Ga,In)(N,As)上的原子重排。

Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure.

作者信息

Ishikawa Fumitaro, Higashi Kotaro, Fuyuno Satoshi, Morifuji Masato, Kondow Masahiko, Trampert Achim

机构信息

Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan.

Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime, 790-8577, Japan.

出版信息

Sci Rep. 2018 Apr 13;8(1):5962. doi: 10.1038/s41598-018-23941-y.

DOI:10.1038/s41598-018-23941-y
PMID:29654243
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5899128/
Abstract

We study the effects of annealing on (Ga,In) (N,As) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.

摘要

我们使用硬X射线光电子能谱和X射线吸收精细结构测量方法研究了退火对（Ga，In）（N，As）的影响。我们观察到了由退火过程引起的表面氧化以及N-As键缺陷的终止。具体而言，我们在与In相关的光电子能谱中观察到了朝向较低结合能的特征化学位移。这种现象似乎是由原子排列引起的，如X射线吸收精细结构测量所示，原子排列在基体中产生了更多的In-N键构型。与基体的原子重排同时发生的III族In结合能的降低，导致了退火前后系统电子性质的差异。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/ffbcc2b30b47/41598_2018_23941_Fig16_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/ffbcc2b30b47/41598_2018_23941_Fig16_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/399c412e09ea/41598_2018_23941_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/c667d3f23df4/41598_2018_23941_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/971f089b7a2d/41598_2018_23941_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/56fb1e898637/41598_2018_23941_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/9b5ec9c6dd79/41598_2018_23941_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/bcdf2d1ab595/41598_2018_23941_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/6b089b0f5148/41598_2018_23941_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/fffaab3ea5e3/41598_2018_23941_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/09ea79e8355a/41598_2018_23941_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/2b9905789160/41598_2018_23941_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/849b750ba250/41598_2018_23941_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/f75e2b24ece6/41598_2018_23941_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/b4b689cbc648/41598_2018_23941_Fig13_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/1b530ff27724/41598_2018_23941_Fig14_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/cfef2cc2988e/41598_2018_23941_Fig15_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2113/5899128/ffbcc2b30b47/41598_2018_23941_Fig16_HTML.jpg

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