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高能电子散射对分子乙烷价层激发的研究。

Investigations of the valence-shell excitations of molecular ethane by high-energy electron scattering.

机构信息

School of Science, Bengbu University, Bengbu 233030, Anhui, China.

Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.

出版信息

J Chem Phys. 2018 Apr 14;148(14):144313. doi: 10.1063/1.5021695.

Abstract

The differential cross sections and generalized oscillator strengths for the low-lying excitations of the valence-shell 1e orbital electron in ethane have been measured for the first time at a high incident electron energy of 1500 eV and a scattering angular range of 1.5°-10°. A weak feature, termed X here, with a band center of about 7.5 eV has been observed, which was also announced by the previous experimental and theoretical studies. The dynamic behaviors of the generalized oscillator strengths for the 3s (8.7 eV), 3s+3p (9.31 eV, 9.41 eV), and X (∼7.5 eV) transitions on the momentum transfer squared have been obtained. The integral cross sections of these transitions from their thresholds to 5000 eV have been obtained with the aid of the BE-scaling (B is the binding energy and E is the excitation energy) method. The optical oscillator strengths of the above transitions determined by extrapolating their generalized oscillator strengths to the limit of the squared momentum transfer K → 0 are in good agreement with the ones from the photoabsorption spectrum [J. W. Au et al., Chem. Phys. 173, 209 (1993)], which indicates that the present differential cross sections, generalized oscillator strengths, and integral cross sections can serve as benchmark data.

摘要

首次在 1500eV 的高入射电子能量和 1.5°-10°的散射角范围内测量了乙烷价壳层 1e 轨道电子的低激发的微分截面和广义振子强度。观察到一个称为 X 的微弱特征,其带宽中心约为 7.5eV,这也被先前的实验和理论研究所宣布。获得了 3s(8.7eV)、3s+3p(9.31eV、9.41eV)和 X(约 7.5eV)跃迁在动量转移平方上的广义振子强度的动态行为。借助 BE 缩放(B 是结合能,E 是激发能)方法,从这些跃迁的阈值到 5000eV 获得了它们的积分截面。通过将广义振子强度外推到平方动量转移 K→0 的极限来确定上述跃迁的光学振子强度与光吸收光谱中的光学振子强度[J.W.Au 等人,化学物理 173,209(1993)]一致,这表明目前的微分截面、广义振子强度和积分截面可作为基准数据。

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