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理性设计钴β-酮亚胺配合物:用于气相沉积尖晶石型钴氧化物光电极的替代前体。

Rational Development of Cobalt β-Ketoiminate Complexes: Alternative Precursors for Vapor-Phase Deposition of Spinel Cobalt Oxide Photoelectrodes.

机构信息

Chemical Technology 1, Institute of Chemistry , Carl von Ossietzky University Oldenburg , 26129 Oldenburg , Germany.

出版信息

Inorg Chem. 2018 May 7;57(9):5133-5144. doi: 10.1021/acs.inorgchem.8b00204. Epub 2018 Apr 17.

Abstract

A series of six cobalt ketoiminates, of which one was previously reported but not explored as a chemical vapor deposition (CVD) precursor, namely, bis(4-(isopropylamino)pent-3-en-2-onato)cobalt(II) ([Co( pki)], 1), bis(4-(2-methoxyethylamino)pent-3-en-2-onato)cobalt(II) ([Co(meki)], 2), bis(4-(2-ethoxyethylamino)pent-3-en-2-onato)cobalt(II) ([Co(eeki)], 3), bis(4-(3-methoxy-propylamino)pent-3-en-2-onato)cobalt(II) ([Co(mpki)], 4), bis(4-(3-ethoxypropylamino)pent-3-en-2-onato)cobalt(II) ([Co(epki)], 5), and bis(4-(3-isopropoxypropylamino)pent-3-en-2-onato)cobalt(II) ([Co( ppki)], 6) were synthesized and thoroughly characterized. Single-crystal X-ray diffraction (XRD) studies on compounds 1-3 revealed a monomeric structure with distorted tetrahedral coordination geometry. Owing to the promising thermal properties, metalorganic CVD of CoO was performed using compound 1 as a representative example. The thin films deposited on Si(100) consisted of the spinel-phase CoO evidenced by XRD, Rutherford backscattering spectrometry/nuclear reaction analysis, and X-ray photoelectron spectroscopy. Photoelectrochemical water-splitting capabilities of spinel CoO films grown on fluorine-doped tin oxide (FTO) and TiO-coated FTO revealed that the films show p-type behavior with conduction band edge being estimated to -0.9 V versus reversible hydrogen electrode. With a thin TiO underlayer, the CoO films exhibit photocurrents related to proton reduction under visible light.

摘要

一系列六种钴 ketoiminates,其中一种以前有报道但未作为化学气相沉积(CVD)前体进行探索,即双(4-(异丙基氨基)戊-3-烯-2-酮基)钴(II)([Co(pki)],1),双(4-(2-甲氧基乙基氨基)戊-3-烯-2-酮基)钴(II)([Co(meki)],2),双(4-(2-乙氧基乙基氨基)戊-3-烯-2-酮基)钴(II)([Co(eeki)],3),双(4-(3-甲氧基丙基氨基)戊-3-烯-2-酮基)钴(II)([Co(mpki)],4),双(4-(3-乙氧基丙基氨基)戊-3-烯-2-酮基)钴(II)([Co(epki)],5)和双(4-(3-异丙氧基丙基氨基)戊-3-烯-2-酮基)钴(II)([Co(ppki)],6)被合成并进行了彻底的表征。化合物 1-3 的单晶 X 射线衍射(XRD)研究表明,它们具有单体结构和扭曲的四面体配位几何形状。由于具有有前途的热性能,使用化合物 1 作为代表性示例进行了 CoO 的金属有机 CVD。沉积在 Si(100)上的薄膜由 XRD、卢瑟福背散射光谱/核反应分析和 X 射线光电子能谱证实为尖晶石相 CoO。在掺氟氧化锡(FTO)和 TiO 涂覆的 FTO 上生长的尖晶石 CoO 薄膜的光电化学水分解能力表明,薄膜表现出 p 型行为,导带边缘估计为相对于可逆氢电极为-0.9 V。在薄的 TiO 底层的情况下,CoO 薄膜在可见光下显示与质子还原相关的光电流。

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