Martín Gemma, Varea Aïda, Cirera Albert, Estradé Sònia, Peiró Francesca, Cornet Albert
MIND, Department of Engineering: Electronics, Universitat de Barcelona, C/Martí i Franquès 1, E-08028, Spain. Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, C/Martí i Franquès 1, E-08028, Spain.
Nanotechnology. 2018 Jul 13;29(28):285702. doi: 10.1088/1361-6528/aabed2. Epub 2018 Apr 17.
Graphene oxide (GO) is currently the object of extensive research because of its potential use in mass production of graphene-based materials, but also due to its tunability which holds great promise for new nanoscale electronic devices and sensors. To obtain a better understanding of the role of GO in electronic nano-devices, the elucidation of the effects of electrical current on a single GO sheet is of great interest. In this work, in situ transmission electron microscopy is used to study the effects of the electrical current flow through single GO sheets using an scanning tunneling microscope holder. In order to correlate the applied current with the structural properties of GO, Raman spectroscopy is carried out and data analysis is used to obtain information regarding the reduction grade and the disorder degree of the GO sheets before and after the application of current.
氧化石墨烯（GO）目前是广泛研究的对象，这不仅是因为它在大规模生产基于石墨烯的材料方面具有潜在用途，还因其可调性，这为新型纳米级电子器件和传感器带来了巨大希望。为了更好地理解GO在电子纳米器件中的作用，阐明电流对单个GO片材的影响极具意义。在这项工作中，使用原位透射电子显微镜，通过扫描隧道显微镜支架来研究电流通过单个GO片材的影响。为了将施加的电流与GO的结构特性相关联，进行了拉曼光谱分析，并利用数据分析来获取有关施加电流前后GO片材的还原程度和无序度的信息。
