Tsai Chia-Lung, Lu Yi-Chen, Chang Sheng Hsiung
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 33302, Taiwan, Republic of China. Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan, Republic of China.
Nanotechnology. 2018 Jul 6;29(27):275704. doi: 10.1088/1361-6528/aabedd. Epub 2018 Apr 17.
Photocurrent extraction and electron injection in CHNHPbBr (MAPbBr) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr interface but also increases the crystallinity of the MAPbBr thin films. The optimized dual-functional PCBM-MAPbBr heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m. In addition, the modulation speed of the MAPbBr based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr thin film can be effectively reduced by using the ESA process.
通过延长溶剂退火（ESA）工艺改善PCBM/MAPbBr界面处的接触，基于CHNHPbBr（MAPbBr）钙钛矿的光电器件中的光电流提取和电子注入均显著增加。光致发光猝灭和X射线衍射实验表明，ESA不仅改善了PCBM/MAPbBr界面处的接触，还提高了MAPbBr薄膜的结晶度。基于优化的双功能PCBM-MAPbBr异质结的光电器件具有4.08%的高功率转换效率和1509 cd m的明亮可见发光。此外，基于MAPbBr的发光二极管的调制速度大于14 MHz，这表明使用ESA工艺可以有效降低MAPbBr薄膜中的缺陷密度。
