Geng Xiangshun, Wang Fangwei, Tian He, Feng Qixin, Zhang Hainan, Liang Renrong, Shen Yang, Ju Zhenyi, Gou Guang-Yang, Deng Ningqin, Li Yu-Tao, Ren Jun, Xie Dan, Yang Yi, Ren Tian-Ling
Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
Department of Physics, Tsinghua University, Beijing 100084, China.
ACS Nano. 2020 Mar 24;14(3):2860-2868. doi: 10.1021/acsnano.9b06345. Epub 2020 Feb 11.
Single-crystal (SC) perovskite is currently a promising material due to its high quantum efficiency and long diffusion length. However, the reported perovskite photodetection range (<800 nm) and response time (>10 μs) are still limited. Here, to promote the development of perovskite-integrated optoelectronic devices, this work demonstrates wider photodetection range and shorter response time perovskite photodetector by integrating the SC CHNHPbBr (MAPbBr) perovskite on silicon (Si). The Si/MAPbBr heterojunction photodetector with an improved interface exhibits high-speed, broad-spectrum, and long-term stability performances. To the best of our knowledge, the measured detectable spectrum (405-1064 nm) largely expands the widest response range reported in previous perovskite-based photodetectors. In addition, the rise time is as fast as 520 ns, which is comparable to that of commercial germanium photodetectors. Moreover, the Si/MAPbBr device can maintain excellent photocurrent performance for up to 3 months. Furthermore, typical gray scale face imaging is realized by scanning the Si/MAPbBr single-pixel photodetector. This work using an ultrafast photodetector by directly integrating perovskite on Si can promote advances in next-generation integrated optoelectronic technology.
单晶（SC）钙钛矿由于其高量子效率和长扩散长度，目前是一种很有前景的材料。然而，已报道的钙钛矿光探测范围（<800纳米）和响应时间（>10微秒）仍然有限。在此，为推动钙钛矿集成光电器件的发展，这项工作通过将SC CHNHPbBr（MAPbBr）钙钛矿集成在硅（Si）上，展示了具有更宽光探测范围和更短响应时间的钙钛矿光电探测器。具有改进界面的Si/MAPbBr异质结光电探测器表现出高速、广谱和长期稳定的性能。据我们所知，所测量的可探测光谱（405 - 1064纳米）大大扩展了先前基于钙钛矿的光电探测器所报道的最宽响应范围。此外，上升时间快至520纳秒，与商用锗光电探测器相当。而且，Si/MAPbBr器件能够在长达3个月的时间内保持优异的光电流性能。此外，通过扫描Si/MAPbBr单像素光电探测器实现了典型的灰度面部成像。这项通过直接在Si上集成钙钛矿使用超快光电探测器的工作能够推动下一代集成光电子技术的进步。
