Department of Polymer Science and Engineering , University of Massachusetts , Amherst , Massachusetts 01003 , United States.
ACS Appl Mater Interfaces. 2018 May 9;10(18):15988-15995. doi: 10.1021/acsami.8b01302. Epub 2018 Apr 26.
Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm V s for rubrene and from 0.6 to 0.1 cm V s for PDIF-CN. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.
为了实现先进、高性能的印刷电子产品和柔性电子产品，需要可扩展的制造高分辨率电极和互连线。在这里，我们通过液桥介导的纳传递模塑演示了特征宽度从 300 μm 到 ∼310 nm 的石墨烯图案的直接打印。这种基于溶液的技术能够在表面能介于 ∼43 和 73 mN m 之间的各种基底上无残留地打印石墨烯图案。使用印刷的石墨烯源极和漏极电极，用单晶苝（p 型）和氟化取代的二氰基对苯二酰亚胺-3,4:9,10-双（二羧酸酯）（PDIF-CN）（n 型）半导体制造了高性能有机场效应晶体管（OFET）。测量的迁移率范围为苝的 2.1 到 0.2 cm V s，PDIF-CN 的 0.6 到 0.1 cm V s。这些单晶 OFET 可以制造互补反相器电路，增益高达 ∼50。最后，这些高分辨率的石墨烯图案与可扩展的处理兼容，为具有更高性能和集成密度的廉价印刷电子产品提供了引人注目的机会。
