Yu Jie-Xiang, Zang Jiadong
Department of Physics and Materials Science Program, University of New Hampshire, Durham, NH 03824, USA.
Sci Adv. 2018 Mar 30;4(3):eaar7814. doi: 10.1126/sciadv.aar7814. eCollection 2018 Mar.
Large perpendicular magnetic anisotropy (PMA) in transition metal thin films provides a pathway for enabling the intriguing physics of nanomagnetism and developing broad spintronics applications. After decades of searches for promising materials, the energy scale of PMA of transition metal thin films, unfortunately, remains only about 1 meV. This limitation has become a major bottleneck in the development of ultradense storage and memory devices. We discovered unprecedented PMA in Fe thin-film growth on the [Formula: see text] N-terminated surface of III-V nitrides from first-principles calculations. PMA ranges from 24.1 meV/u.c. in Fe/BN to 53.7 meV/u.c. in Fe/InN. Symmetry-protected degeneracy between - and orbitals and its lift by the spin-orbit coupling play a dominant role. As a consequence, PMA in Fe/III-V nitride thin films is dominated by first-order perturbation of the spin-orbit coupling, instead of second-order in conventional transition metal/oxide thin films. This game-changing scenario would also open a new field of magnetism on transition metal/nitride interfaces.
过渡金属薄膜中的大垂直磁各向异性(PMA)为实现引人入胜的纳米磁学物理特性和开发广泛的自旋电子学应用提供了一条途径。经过数十年对有前景材料的探索,不幸的是,过渡金属薄膜的PMA能量尺度仍仅约为1毫电子伏特。这一限制已成为超密集存储和记忆器件发展的主要瓶颈。我们通过第一性原理计算在III-V族氮化物的[化学式:见原文]N端表面上的铁薄膜生长中发现了前所未有的PMA。PMA范围从铁/氮化硼中的24.1毫电子伏特/每晶胞到铁/氮化铟中的53.7毫电子伏特/每晶胞。-和轨道之间的对称性保护简并及其通过自旋轨道耦合的解除起着主导作用。因此,铁/III-V族氮化物薄膜中的PMA由自旋轨道耦合的一阶微扰主导,而不是传统过渡金属/氧化物薄膜中的二阶微扰。这种改变游戏规则的情况也将开启过渡金属/氮化物界面磁学的新领域。