Nam Hanyeob, Kim Hong-Seok, Han Jae-Hee, Kwon Sang Jik, Cho Eou Sik
Department of Electronics Engineering, Gachon University, Gyeonggido, 13120, Korea.
Department of Energy IT, Gachon University, Gyeonggido, 13120, Korea.
J Nanosci Nanotechnol. 2018 Sep 1;18(9):6257-6264. doi: 10.1166/jnn.2018.15649.
As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.
作为在衬底上直接形成p型二维过渡金属二硫属化物（TMDC）薄膜的方法，通过射频（RF）溅射，利用阴影掩膜图案在蓝宝石玻璃衬底上沉积二硫化钨（WS2）薄膜，溅射功率范围为60 W至150 W，并在500°C至800°C的不同高温下通过快速热处理（RTP）进行退火。基于扫描电子显微镜（SEM）图像和拉曼光谱，发现对于在较高射频溅射功率下制备的WS2薄膜，具有更好的表面粗糙度以及占主导的E12g和A1g模式峰。基于霍尔测量结果，所有WS2薄膜也都有可能获得高迁移率和载流子密度。优化了这些在蓝宝石衬底上的WS2薄膜的工艺条件，使其采用低射频溅射功率和高温退火。
