Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan.
Nanoscale Res Lett. 2014 Feb 26;9(1):97. doi: 10.1186/1556-276X-9-97.
Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF2)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cross-sectional scanning electron microscopy (SEM) observation and X-ray diffraction analyses showed that the FZO thin films were of polycrystalline nature with a preferential growth along (002) plane perpendicular to the surface of the glass substrate. Secondary ion mass spectrometry (SIMS) analyses of the FZO thin films showed that there was incorporation of F atoms in the FZO thin films, even if the substrate temperature was 300°C. Finally, the effect of substrate temperature on the transmittance ratio, optical energy gap, Hall mobility, carrier concentration, and resistivity of the FZO thin films was also investigated.
采用射频磁控溅射法，以掺氟质量分数为 1.5%的氧化锌（ZnO）为靶材，在玻璃衬底上沉积了高透明导电掺氟 ZnO（FZO）薄膜。研究了 FZO 薄膜的结构、电学和光学性能随衬底温度（室温至 300°C）的变化。通过横截面扫描电子显微镜（SEM）观察和 X 射线衍射分析表明，FZO 薄膜为多晶态，沿垂直于玻璃衬底表面的（002）面择优生长。FZO 薄膜的二次离子质谱（SIMS）分析表明，即使在 300°C 的衬底温度下，FZO 薄膜中也有 F 原子的掺入。最后，还研究了衬底温度对 FZO 薄膜透光率比、光学能隙、霍尔迁移率、载流子浓度和电阻率的影响。
