Ma Sang Min, Kwon Sang Jik, Cho Eou-Sik
Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1439-1444. doi: 10.1166/jnn.2019.16231.
To obtain molybdenum disulfide (MoS₂) patterns without any mechanical problems caused by the transfer process, direct current (DC) sputtering and rapid thermal processing (RTP) were used to form MoS₂ instead of the conventional chemical vapor deposition (CVD) process. To form MoS₂ on a soda-lime glass substrate at temperatures below 600 °C, MoS₂ films were deposited at various DC sputtering powers and annealed at various temperatures from 400 °C to 550 °C. From the scanning electron microscope (SEM) and atomic force microscope (AFM) results, the surface morphologies of the MoS₂ films can be observed, depending on the sputtering power and the film thickness. The Raman spectrum results showed that the and mode peaks appeared at approximately 372 cm and 400 cm, respectively, and the MoS₂ surface was crystallized in the in-plane direction. The X-ray photoelectron spectroscopy (XPS) results showed noticeable S 2 (2, 2) peaks and Mo 3 (3, 3) peaks at stable binding energies after RTP at temperatures below 600 °C. The high mobilities and carrier densities of all the MoS₂ films can be investigated from the Hall measurements.
为了获得没有转移过程中任何机械问题的二硫化钼（MoS₂）图案，采用直流（DC）溅射和快速热处理（RTP）来形成MoS₂，而不是传统的化学气相沉积（CVD）工艺。为了在温度低于600°C的钠钙玻璃基板上形成MoS₂，在不同的直流溅射功率下沉积MoS₂薄膜，并在400°C至550°C的不同温度下进行退火。从扫描电子显微镜（SEM）和原子力显微镜（AFM）的结果可以观察到，MoS₂薄膜的表面形貌取决于溅射功率和薄膜厚度。拉曼光谱结果表明，E₂g和A₁g模式峰分别出现在约372 cm⁻¹和400 cm⁻¹处，并且MoS₂表面在面内方向上结晶。X射线光电子能谱（XPS）结果表明，在低于600°C的温度下进行RTP后，在稳定的结合能处出现了明显的S 2p（2, 2）峰和Mo 3d（3, 3）峰。可以通过霍尔测量研究所有MoS₂薄膜的高迁移率和载流子密度。
