Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 9190401, Israel.
Phys Rev Lett. 2018 Mar 23;120(12):124801. doi: 10.1103/PhysRevLett.120.124801.
A plastic response due to dislocation activity under intense electric fields is proposed as a source of breakdown. A model is formulated based on stochastic multiplication and arrest under the stress generated by the field. A critical transition in the dislocation population is suggested as the cause of protrusion formation leading to subsequent arcing. The model is studied using Monte Carlo simulations and theoretical analysis, yielding a simplified dependence of the breakdown rates on the electric field. These agree with experimental observations of field and temperature breakdown dependencies.
提出了一种由于在强电场下位错活动引起的塑性响应作为击穿的源。该模型基于在电场产生的应力下的随机增殖和捕获来构建。提出位错密度的临界转变作为导致随后的电弧产生的突出形成的原因。该模型使用蒙特卡罗模拟和理论分析进行了研究,得出了击穿速率对电场的简化依赖性。这些与电场和温度击穿依赖性的实验观察结果一致。