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通过分子钴物种对碳氮化物电极进行表面工程及其光电化学应用。

Surface Engineering of Carbon Nitride Electrode by Molecular Cobalt Species and Their Photoelectrochemical Application.

机构信息

Department of Colloid Chemistry, Max Planck Institute of Colloids and Interfaces, 14424, Potsdam, Germany.

State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, Shaanxi Joint Laboratory of Graphene, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.

出版信息

Chem Asian J. 2018 Jun 18;13(12):1539-1543. doi: 10.1002/asia.201800487. Epub 2018 May 17.

DOI:10.1002/asia.201800487
PMID:29696798
Abstract

Graphitic carbon nitride (CN) has been widely regarded as a promising photocatalyst since the discovery of its capability for photocatalytic hydrogen evolution. Herein, we developed a functional CN film on a conductive fluorine-doped tin oxide (FTO) electrode by using a microprinting-based direct growth method. Furthermore, the photoelectrochemical performance of the derived CN@FTO film was demonstrated to be enhanced by incorporating molecular cobalt species. The reduced charge transport resistance in the cobalt-modified CN@FTO films is suggested to accelerate the charge-carrier transfer rate and thus to improve the performance in photoelectrochemical application. The approach is versatile and can be further optimized by selecting a proper "ink" solution and modifier on various conductive substrates.

摘要

石墨相氮化碳(CN)自从被发现具有光催化析氢能力以来,一直被广泛认为是一种很有前途的光催化剂。在此,我们通过基于微印刷的直接生长方法在导电掺氟氧化锡(FTO)电极上开发了一种功能性 CN 薄膜。此外,通过引入分子钴物种,证明所得到的 CN@FTO 薄膜的光电化学性能得到了增强。在钴修饰的 CN@FTO 薄膜中,减少的电荷传输电阻被认为可以加速电荷载流子转移速率,从而提高光电化学应用中的性能。该方法具有通用性,可以通过在各种导电基底上选择合适的“油墨”溶液和修饰剂进一步优化。

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