Tan Dezhi, Wang Xiaofan, Zhang Wenjin, Lim Hong En, Shinokita Keisuke, Miyauchi Yuhei, Maruyama Mina, Okada Susumu, Matsuda Kazunari
Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan.
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8571, Japan.
Small. 2018 May;14(22):e1704559. doi: 10.1002/smll.201704559. Epub 2018 Apr 26.
Simple stacking of thin van der Waals 2D materials with different physical properties enables one to create heterojunctions (HJs) with novel functionalities and new potential applications. Here, a 2D material p-n HJ of GeSe/MoS is fabricated and its vertical and horizontal carrier transport and photoresponse properties are studied. Substantial rectification with a very high contrast (>10 ) through the potential barrier in the vertical-direction tunneling of HJs is observed. The negative differential transconductance with high peak-to-valley ratio (>10 ) due to the series resistance change of GeSe, MoS , and HJs at different gate voltages is observed. Moreover, strong and broad-band photoresponse via the photoconductive effect are also demonstrated. The explored multifunctional properties of the GeSe/MoS HJs are expected to be important for understanding the carrier transport and photoresponse of 2D-material HJs for achieving their use in various new applications in the electronics and optoelectronics fields.
简单堆叠具有不同物理性质的超薄范德华二维材料能够创造出具有新颖功能和新潜在应用的异质结（HJs）。在此，制备了GeSe/MoS的二维材料p-n异质结，并研究了其垂直和水平载流子传输以及光响应特性。观察到在异质结垂直方向隧穿中通过势垒实现了具有非常高对比度（>10）的显著整流。观察到由于在不同栅极电压下GeSe、MoS和异质结的串联电阻变化，出现了具有高峰谷比（>10）的负微分跨导。此外，还通过光电导效应证明了强烈且宽带的光响应。预计所探索的GeSe/MoS异质结的多功能特性对于理解二维材料异质结的载流子传输和光响应以实现其在电子和光电子领域的各种新应用非常重要。
