Yamamoto Shunsuke, Kitanaka Takahisa, Miyashita Tokuji, Mitsuishi Masaya
Nanotechnology. 2018 Jun 29;29(26):26LT02. doi: 10.1088/1361-6528/aabdc6. Epub 2018 Apr 30.
We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO ultra-thin films. The SiO film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO∣PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO interface.
我们提出了一种由导电聚合物（PEDOT:PSS）和SiO超薄膜组成的电阻开关器件。SiO薄膜由倍半硅氧烷聚合物纳米片制成，作为电阻开关层。具有金属（Ag或Au）∣SiO∣PEDOT:PSS结构的器件显示出良好的电阻开关性能，其设置-重置电压低至几百毫伏。通过改变电极材料、周围气氛和SiO薄膜厚度来研究器件特性和工作机制。结果表明，电阻开关基于PEDOT:PSS∣SiO界面处的水和离子迁移。
