Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO films.

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO ultra-thin films. The SiO film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO∣PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO interface.