Rana Shammi, Prasoon Anupam, Jha Plawan Kumar, Prathamshetti Anil, Ballav Nirmalya
Department of Chemistry, Indian Institute of Science Education and Research (IISER) , Dr. Homi Bhabha Road, Pashan, Pune 411 008, India.
Department of Physics, Indian Institute of Science Education and Research (IISER) , Dr. Homi Bhabha Road, Pashan, Pune 411 008, India.
J Phys Chem Lett. 2017 Oct 19;8(20):5008-5014. doi: 10.1021/acs.jpclett.7b02138. Epub 2017 Sep 29.
Metal-organic coordination polymers (CPs) downsized to thin films with controllable electrical conductivity are promising for electronic device applications. Here we demonstrate, for the first time, thermally driven resistive switching in thin films of semiconducting CPs consisting of silver ion and tetracyanoquinodimethane ligand (Ag-TCNQ). High-quality and highly hydrophobic thin films of Ag-TCNQ were fabricated through a layer-by-layer approach upon sacrificing a predeposited layer of Cu-TCNQ on a thiolated Au substrate. Reversible switching between the high-resistance state (HRS) at 300 K and the low-resistance state (LRS) at 400 K with an enhancement factor of as high as ∼10 in the electrical resistance was realized. The phenomenon is attributed to the alternation of the Schottky barrier at the metal-semiconductor interface by thermal energy and not due to the formation of a conductive filament. Our discovery of thermally driven resistive switching as well as sacrificial growth of CP thin films on an organically modified substrate holds promise for the development of solution-processable nonvolatile memory devices.
尺寸缩小到具有可控电导率的薄膜的金属有机配位聚合物（CPs）在电子器件应用方面很有前景。在此，我们首次展示了由银离子和四氰基对苯二醌二甲烷配体（Ag-TCNQ）组成的半导体CPs薄膜中的热驱动电阻开关。通过逐层方法，在硫醇化金衬底上牺牲预先沉积的Cu-TCNQ层，制备出了高质量且高度疏水的Ag-TCNQ薄膜。实现了在300 K时的高电阻状态（HRS）和400 K时的低电阻状态（LRS）之间的可逆切换，电阻增强因子高达约10。该现象归因于热能导致的金属-半导体界面处肖特基势垒的变化，而非由于形成了导电细丝。我们对热驱动电阻开关以及CP薄膜在有机修饰衬底上的牺牲生长的发现，为可溶液加工的非易失性存储器件的发展带来了希望。
